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參數資料
| 型號： | 2N7000 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 17K |
| 代理商： | 2N7000 |
Prelim. 9/99
2N7000
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
N–CHANNEL
ENHANCEMENT MODE
MOS TRANSISTOR
FEATURES
V(BR)DSS = 60V
RDS(ON) = 5W
W
ID = 1A
VDS
Drain – Source Voltage
VGS
Gate – Source Voltage
ID
Drain Current
IDM
Pulsed Drain Current
PD
Power Dissipation
@ TCASE = 25°C
Derate above 25°C
Tj,Tstg
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purposes,
1/16 from case for 10 seconds
60V
±40V
200mA
500mA
400mW
3.2mW/°C
–55 to 150°C
300°C
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C unless otherwise stated)
TO92 PACKAGE
0.45
14.0
0.44
5.0
4.0
2.6
4.0
PIN 1 – Drain
PIN 2 – Gate
PIN 3 – Drain
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N-7000 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2N7000 AMO | 功能描述:MOSFET TRENCH 31V-99V G2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7000,126 | 功能描述:MOSFET TRENCH 31V-99V G2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7000 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N LOGIC TO-92 |
| 2N7000/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Small Signal MOSFET 200 mAmps， 60 Volts |
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