- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄24679 > 2N7000AMO (NXP SEMICONDUCTORS) 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 PDF資料下載
參數(shù)資料
| 型號： | 2N7000AMO |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | PLASTIC, SPT, TO-92 VARIANT, SC-43, 3 PIN |
| 文件頁數(shù)： | 1/13頁 |
| 文件大小： | 263K |
| 代理商： | 2N7000AMO |
2N7000
N-channel enhancement mode eld-effect transistor
Rev. 03 — 19 May 2000
Product specication
c
1.
Description
N-channel enhancement mode eld-effect transistor in a plastic package using
TrenchMOS1 technology.
Product availability:
2N7000 in SOT54 (TO-92 variant).
2.
Features
s TrenchMOS technology
s Very fast switching
s Logic level compatible.
3.
Applications
s Relay driver
s High speed line driver
s Logic level translator.
4.
Pinning information
1.
TrenchMOS is a trademark of Royal Philips Electronics.
Table 1:
Pinning - SOT54, simplied outline and symbol
Pin
Description
Simplied outline
Symbol
1
drain (d)
SOT54 (TO-92 variant)
N-channel MOSFET
2
gate (g)
3
source (s)
32 1
03ab40
d
g
s
03ab30
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 0580-0186-25 | Power Magnetics |
| 0580-0186-50 | Power Magnetics |
| 0580-0256-25 | Power Magnetics |
| 0580-0296-20 | Power Magnetics |
| 0580-0336-40 | Power Magnetics |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7000-AP | 制造商:Micro Commercial Components (MCC) 功能描述:Trans MOSFET N-CH 60V 0.3A 3-Pin TO-92 Ammo |
| 2N7000BU | 功能描述:MOSFET 60V N-Channel Sm Sig RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7000BU_T | |
| 2N7000CSM | 制造商:TT Electronics/ Semelab 功能描述:MOSFETHI-RELN CH60V0.2ALCC1 制造商:TT Electronics/ Semelab 功能描述:MOSFET,HI-REL,N CH,60V,0.2A,LCC1 |
| 2N7000CSM_06 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Na??CHANNEL ENHANCEMENT MODE MOS TRANSISTOR |
發(fā)布緊急采購，3分鐘左右您將得到回復。