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參數資料
| 型號： | 2N7002-G |
| 廠商： | SUPERTEX INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-Channel Enhancement-Mode Vertical DMOS FETs |
| 中文描述： | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封裝： | GREEN PACKAGE-3 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 556K |
| 代理商： | 2N7002-G |
2N7002
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-Channel devices
Applications
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Ordering Information
General Description
The Supertex 2N7002 is an enhancement-mode (normally-
off) transistor that utilizes a vertical DMOS structure
and Supertex’s well-proven silicon-gate manufacturing
process. This combination produces a device with the
power handling capabilities of bipolar transistors, and the
high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS
structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Device
Package
BV
DSS
/BV
DGS
(V)
R
DS(ON)
(max)
(Ω)
I
D(ON)
(min)
(A)
2N7002
2N7002-G
TO-236AB (same as SOT-23)
60
7.5
0.5
Absolute Maximum Ratings
Parameter
DRAIN to SOURCE voltage
DRAIN to GATE voltage
GATE to SOURCE voltage
Operating and storage temperature
Soldering temperature
1
Value
BV
DSS
BV
DGS
±30V
-55°C to +150°C
+300°C
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Notes:
1. Distance of 1.6mm from case for 10 seconds.
Pin Configuration
N-Channel Enhancement-Mode
Vertical DMOS FETs
-G indicates package is RoHS compliant (‘Green’)
TO-236AB
(Top View)
GATE
SOURCE
DRAIN
Product Marking
= 2-week alpha date code
702
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| 2N7002BKM | 60 V, 450 mA N-channel Trench MOSFET |
| 2N7002BKS | 60 V, 300 mA dual N-channel Trench MOSFET |
| 2N7002BKT | 60 V, 290 mA N-channel Trench MOSFET |
| 2N7002BKV | 60 V, 340 mA dual N-channel Trench MOSFET |
| 2N7002E | 30V N-Channel PowerTrench MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N7002-G_12 | 制造商:COMCHIP 制造商全稱:Comchip Technology 功能描述:MOSFET |
| 2N7002G-AE2-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:0.3A, 60V N-CHANNEL POWER MOSFET |
| 2N7002H-13 | 功能描述:MOSFET N-CH 60V 0.17A SOT23 制造商:diodes incorporated 系列:- 包裝:帶卷（TR） 零件狀態:有效 FET 類型:MOSFET N 通道，金屬氧化物 FET 功能:標準 漏源極電壓（Vdss）:60V 電流 - 連續漏極（Id）（25°C 時）:170mA（Ta） 不同?Id，Vgs 時的?Rds On（最大值）:7.5 歐姆 @ 50mA，5V 不同 Id 時的 Vgs（th）（最大值）:3V @ 250μA 不同 Vgs 時的柵極電荷（Qg）:0.35nC @ 4.5V 不同 Vds 時的輸入電容（Ciss）:26pF @ 25V 功率 - 最大值:370mW 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商器件封裝:SOT-23 標準包裝:10,000 |
| 2N7002H6327 | 制造商:Infineon Technologies AG 功能描述: 制造商:Rochester Electronics LLC 功能描述: |
| 2N7002H6327XT | 制造商:Infineon Technologies AG 功能描述:N-KAN 制造商:Infineon Technologies AG 功能描述:MOSFET 2N-CH 60V 0.3A SOT363 |
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