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參數資料
| 型號： | 2N7002K |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 60-V (D-S) MOSFET(漏源擊穿電壓60V的N溝道增強型MOSFET) |
| 中文描述： | N通道60 - V（下局副局長）MOSFET的（漏源擊穿電壓60V的的N溝道增強型MOSFET的） |
| 文件頁數： | 1/5頁 |
| 文件大小： | 41K |
| 代理商： | 2N7002K |
2N7002K
Vishay Siliconix
New Product
Document Number: 71333
S-02464—Rev. A, 25-Oct-00
www.vishay.com
1
N-Channel 60-V (D-S) MOSFET
V
DS
(V)
r
DS(on)
( )
I
D
(mA)
60
2 @ V
GS
= 10 V
300
Low On-Resistance: 2
Low Threshold: 2 V (typ)
Low Input Capacitance: 25 pF
Fast Switching Speed: 25 ns
Low Input and Output Leakage
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage
Direct Logic-Level Interface: TTL/CMOS
Drivers: Relays, Solenoids, Lamps, Hammers,
Display, Memories, Transistors, etc.
Battery Operated Systems
Solid-State Relays
2N7002 (7K)*
*Marking Code
TO-236
SOT-23
1
2
3
Top View
G
S
D
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
60
Gate-Source Voltage
V
GS
20
V
T
A
= 25 C
300
Continuous Drain Current
(T
J
= 150 C)
b
T
A
= 100 C
I
D
190
mA
Pulsed Drain Current
a
I
DM
800
T
A
= 25 C
0.35
Power Dissipation
b
T
A
= 100 C
P
D
0.14
W
Maximum Junction-to-Ambient
b
R
thJA
350
C/W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Notes
a.
b.
Pulse width limited by maximum junction temperature.
Surface mounted on FR4 board.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N7002K / T1 | 制造商:Vishay Siliconix 功能描述:TRANSISTOR MOSFET 制造商:Vishay Siliconix 功能描述:TRANSISTOR, MOSFET |
| 2N7002K _R1 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| 2N7002K,215 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7002K | 制造商:NXP Semiconductors 功能描述:MOSFET N CH 60V 0.34A SOT23 |
| 2N7002K_ R2 _00001 | 制造商:PanJit Touch Screens 功能描述: |
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