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參數資料
| 型號： | 2N7334R1 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 100 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | HERMETIC SEALED PACKAGE-14 |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 22K |
| 代理商： | 2N7334R1 |
2N7334
IRFG110
VGS
Gate – Source Voltage
ID
Continuous Drain Current
(VGS = 10V , Tcase = 25°C)
ID
Continuous Drain Current
(VGS = 10V , Tcase = 100°C)
IDM
Pulsed Drain Current
PD
Power Dissipation @ Tcase = 25°C
Linear Derating Factor
EAS
Single Pulse Avalanche Energy 2
dv/dt
Peak Diode Recovery 3
TJ , Tstg
Operating and Storage Temperature Range
RθJC
Thermal Resistance Junction to Case
RθJCA
Thermal Resistance Junction-to-Ambient
±20V
1.A
0.6A
4A
1.4W
0.011W/°C
75mJ
5.5V/ns
–55 to 150°C
6.25°C/W
175°C/W
MECHANICAL DATA
Dimensions in mm (inches)
14
1
8
7
2.134
(0.084)
6.
42
6
±
0.3
0
5
(0
.2
53
±
0
.0
12)
9.
52
5
±
0.6
3
5
(0
.3
75
±
0
.0
25)
1.422 ± 0.102
(0.056 ± 0.004)
2.54
(0.100)
0.457 ± 0.102
(0.018 ± 0.004)
19.507 ± 0.432
(0.768 ± 0.017)
ABSOLUTE MAXIMUM RATINGS(T
case = 25°C unless otherwise stated)
14 LEAD MOULDED DIP PACKAGE
Notes
1) Pulse Test: Pulse Width
≤ 300s, δ≤ 2%
2) @ VDD = 25V , L ≥ 112mH , RG = 25 , Peak IL = 1A , Starting TJ = 25°C
3) @ ISD ≤ 1A , di/dt ≤ 75A/s , VDD ≤ BVDSS , TJ ≤ 150°C , Suggested RG = 24
14 LEAD DUAL IN LINE QUAD
N-CHANNEL
POWER MOSFETS
FEATURES
AVALANCHE ENERGY RATED
HERMETICALLY SEALED
DYNAMIC dv/dt RATING
SIMPLE DRIVE REQUIREMENTS
FOR AUTOMATIC INSERTION
SIMPLE DRIVE REQUIREMENTS
EASE OF PARALLELING
4 N-CHANNEL CO-PACKAGED HEXFETS
LIGHTWEIGHT
N-CHANNEL
1—Drain 1
2—Source 1
3—Gate 1
N-CHANNEL
5—Gate 2
6—Source 2
7—Drain 2
N-CHANNEL
8—Drain 3
9—Source3
10—Gate 3
N-CHANNEL
12—Gate 4
13—Source 4
14—Drain 4
BVDSS
±100V
ID(cont)
1A
RDS(on)
0.7
11,4—NC
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Document Number 5829
Issue 1
相關PDF資料 |
PDF描述 |
|---|---|
| 2N7334 | 4 CHANNEL, Si, POWER, FET |
| 2N7336-QR-BR1 | 1 A, 100 V, 0.8 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 2N7336 | 1 A, 100 V, 0.8 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 2N7336-QR-EB | 1 A, 100 V, 0.8 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 2N7336 | 1 A, 100 V, 0.7 ohm, N AND P-CHANNEL, Si, POWER, MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N7335 | 制造商:Microsemi Corporation 功能描述:MOSFET P-CH QUAD 100V MO-036AB |
| 2N7335JANTX | 制造商:INTRSL 功能描述: |
| 2N7336 | 制造商:SAMES 制造商全稱:SAMES 功能描述:14 LEAD DUAL IN LINE QUAD N & P CHANNEL POWER MOSFETS |
| 2N7336JANTX | 制造商:IRF 制造商全稱:International Rectifier 功能描述:POWER MOSFET THRU-HOLE (MO-036AB) |
| 2N7336JANTXV | 制造商:IRF 制造商全稱:International Rectifier 功能描述:POWER MOSFET THRU-HOLE (MO-036AB) |
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