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參數(shù)資料
| 型號： | 2N7620M2 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 800 mA, 60 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | HERMETIC SEALED, FLAT PACK-14 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 223K |
| 代理商： | 2N7620M2 |
Absolute Maximum Ratings (Per Die)
Parameter
Units
ID @ VGS = 4.5V, TC = 25°C Continuous Drain Current
0.8
ID @ VGS = 4.5V, TC = 100°C Continuous Drain Current
0.5
IDM
Pulsed Drain Current
3.2
PD @ TC = 25°C
Max. Power Dissipation
0.6
W
Linear Derating Factor
0.005
W/°C
VGS
Gate-to-Source Voltage
±10
V
EAS
Single Pulse Avalanche Energy
16
mJ
IAR
Avalanche Current
0.8
A
EAR
Repetitive Avalanche Energy
0.06
mJ
dv/dt
Peak Diode Recovery dv/dt
10.2
V/ns
TJ
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Lead Temperature
300 (0.63 in./1.6 mm from case for 10s)
Weight
0.52 (Typical)
g
°
C
A
03/17/08
www.irf.com
1
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHLA770Z4
100K Rads (Si)
0.60
0.8A
IRHLA730Z4
300K Rads (Si)
0.60
0.8A
For footnotes refer to the last page
Pre-Irradiation
RADIATION HARDENED
IRHLA770Z4
LOGIC LEVEL POWER MOSFET
60V, Quad N-CHANNEL
THRU-HOLE (14-LEAD FLAT PACK)
Features:
n 5V CMOS and TTL Compatible
n Low RDS(on)
n Fast Switching
n
Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n Light Weight
n
Complimentary P-Channel Available -
IRHLA7970Z4
International Rectifier’s R7TM Logic Level Power
MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable operating
limits over the full operating temperature and post
radiation. This is achieved while maintaining single
event gate rupture and single event burnout immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
TECHNOLOGY
2N7620M2
14-Lead Flat Pack
PD-97305
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7622U2 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2) |
| 2N7632UC | 制造商:IRF 制造商全稱:International Rectifier 功能描述:RADIATION HARDENED60V, Combination 1N-1P-CHANNELLOGIC LEVEL POWER MOSFET |
| 2N7635-GA | 功能描述:兩極晶體管 - BJT SiC High Temp SJT 650V 4A 225 Degree C RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N7636-GA | 功能描述:兩極晶體管 - BJT SiC High Temp SJT 650V 4A 225 Degree C RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N7637-GA | 功能描述:兩極晶體管 - BJT SiC High Temp SJT 650V 7A 225 Degree C RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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