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參數(shù)資料
| 型號： | 2SA0879R |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 70 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | ROHS COMPLIANT, SC-51, TO-92L-A1, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 249K |
| 代理商： | 2SA0879R |
Transistors
1
Publication date: November 2002
SJC00006BED
2SA0879 (2SA879)
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC1573
■ Features
High collector-emitter voltage (Base open) V
CEO
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
250
V
Collector-emitter voltage (Base open)
VCEO
200
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
70
mA
Peak collector current
ICP
100
mA
Collector power dissipation
PC
1W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC
= 100 A, I
B
= 0
200
V
Emitter-base voltage (Collector open)
VEBO
IE = 1 A, IC = 0
5V
Forward current transfer ratio *
hFE
VCE = 10 V, IC = 5 mA
60
220
Collector-emitter saturation voltage
VCE(sat)
IC
= 50 mA, I
B
= 5 mA
1.5
V
Transition frequency
fT
VCB = 10 V, IE = 10 mA, f = 200 MHz
50
80
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
5
10
pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
5.9±0.2
0.7±0.1
4.9±0.2
8.6
±
0.2
0.7
+0.3 –0.2
13.5
±
0.5
2.54±0.15
(3.2)
(1.27)
0.45
+0.2
–0.1
0.45
+0.2
–0.1
13
2
Rank
Q
R
hFE
60 to 150
100 to 220
1 : Emitter
2 : Collector
3 : Base
EIAJ : SC-51
TO-92L-A1 Package
Note) The part number in the parenthesis shows conventional part number.
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2SA0885 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type |
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| 2SA08850R | 功能描述:TRANS PNP HF 35VCEO 1A TO-126 RoHS:是 類別:分離式半導體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SA0885Q | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 1A I(C) | TO-126 |
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