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參數資料
| 型號： | 2SA1123 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon PNP epitaxial planer type |
| 中文描述： | 50 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | ROHS COMPLIANT, TO-92-B1, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 36K |
| 代理商： | 2SA1123 |
1
Transistor
2SA1123
Silicon PNP epitaxial planer type
For low-frequency high breakdown voltage amplification
Complementary to 2SC2631
I
Features
G
Satisfactory foward current transfer ratio h
FE
collector current I
C
characteristics.
G
High collector to emitter voltage V
CEO
.
G
Small collector output capacitance C
ob
.
G
Makes up a complementary pair with 2SC2631, which is opti-
mum for the pre-driver stage of a 20 to 40W output amplifier.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
5.0
±
0.2
4.0
±
0.2
5
±
0
1
±
0
0.45
+0.2
0.45
+0.2
1.27
1.27
2
±
0
2.54
±
0.15
2
1
3
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–150
–150
–5
–100
–50
750
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Noise voltage
Symbol
I
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
C
ob
NV
Conditions
V
CB
= –100V, I
E
= 0
I
C
= –0.1mA, I
B
= 0
I
E
= –10
μ
A, I
C
= 0
V
CE
= –5V, I
C
= –10mA
I
C
= –30mA, I
B
= –3mA
V
CB
= –10V, I
E
= 10mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
V
CE
= –10V, I
C
= –1mA, G
V
= 80dB
R
g
= 100k
, Function = FLAT
min
–150
–5
130
typ
200
150
max
–1
450
–1
5
300
Unit
μ
A
V
V
V
MHz
pF
mV
*
h
FE
Rank classification
Rank
R
S
T
h
FE
130 ~ 220
185 ~ 330
260 ~ 450
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| 2SA1127 | Silicon PNP epitaxial planer type |
| 2SA1128 | Silicon PNP epitaxial planer type |
| 2SA1135 | 2SA1135 |
| 2SA1141 | 2SA1141 2SC2681 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SA11230RA | 功能描述:TRANS PNP 150VCEO 50MA TO-92 RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SA1123R | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA1123S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 50MA I(C) | TO-92 |
| 2SA1123T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 50MA I(C) | TO-92 |
| 2SA1124 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification) |
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