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參數(shù)資料
| 型號： | 2SA1182-Y |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封裝： | 2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 145K |
| 代理商： | 2SA1182-Y |
2SA1182
2007-11-01
1
TOSHIBA Transistor
Silicon PNP Epitaxial (PCT process)
2SA1182
Audio Frequency Low Power Amplifier Applications
Driver Stage Amplifier Applications
Switching Applications
Excellent hFE linearity: hFE (2) = 25 (min)
at VCE = 6 V, IC = 400 mA
Complementary to 2SC2859.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
35
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
500
mA
Base current
IB
50
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 35 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
0.1
μA
hFE (1)
VCE = 1 V, IC = 100 mA
70
240
DC current gain
(Note)
hFE (2)
VCE = 6 V, IC = 400 mA
25
Collector-emitter saturation voltage
VCE (sat)
IC = 100 mA, IB = 10 mA
0.1
0.25
V
Base-emitter voltage
VBE
VCE = 1 V, IC = 100 mA
0.8
1.0
V
Transition frequency
fT
VCE = 6 V, IC = 20 mA
200
MHz
Collector output capacitance
Cob
VCB = 6 V, IE = 0, f = 1 MHz
13
pF
Note: hFE (1) classification O(O): 70~140, Y(Y): 120~240, GR(G): 200~400 (
) Marking Symbol
hFE (2) classification O: 25 (min), Y: 40 (min), GR: 70 (min)
Marking
Unit: mm
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
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| 2SA1182TE85L | 500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1182-Y(TE85L,F) | 制造商:Toshiba 功能描述:PNP |
| 2SA1182-Y,LF | 功能描述:TRANS PNP 30V 0.5A S-MINI 制造商:toshiba semiconductor and storage 系列:- 包裝:剪切帶（CT） 零件狀態(tài):停產(chǎn) 晶體管類型:PNP 電流 - 集電極（Ic）（最大值）:500mA 電壓 - 集射極擊穿（最大值）:30V 不同?Ib，Ic 時的?Vce 飽和值（最大值）:250mV @ 10mA，100mA 電流 - 集電極截止（最大值）:100nA（ICBO） 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:120 @ 100mA，1V 功率 - 最大值:150mW 頻率 - 躍遷:200MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商器件封裝:S-Mini 標準包裝:1 |
| 2SA1182-Y-TE85L | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SA1184 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA1184-Y | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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