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參數資料
型號: 2SA1241(2-7B1A)
元件分類: 小信號晶體管
英文描述: 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: ROHS COMPLIANT, 2-7B1A, 3 PIN
文件頁數: 1/5頁
文件大小: 190K
代理商: 2SA1241(2-7B1A)
2SA1241
2009-12-21
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1241
Power Amplifier Applications
Power Switching Applications
Low Collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
Excellent switching time: tstg = 1.0 μs (typ.)
Complementary to 2SC3076
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
2
A
Base current
IB
1
A
Ta = 25°C
1.0
Collector power
dissipation
Tc = 25°C
PC
10
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
相關PDF資料
PDF描述
2SA1241-O(2-7J1A) 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1241-Y(2-7J1A) 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1241(2-7B1A) 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1241-Y(2-7B1A) 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1241-O(2-7B1A) 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
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