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參數(shù)資料
| 型號(hào)： | 2SA1356 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 0.8 A, 40 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | 2-8H1A, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 128K |
| 代理商： | 2SA1356 |
2SA1356
2004-07-07
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1356
Audio Power Amplifier Applications
Low saturation voltage: VCE (sat) = 0.32 V (typ.)
(IC = 500 mA, IB = 50 mA)
High collector power dissipation: PC = 1.2 W (Ta = 25°C)
Complementary to 2SC3419
Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
40
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
800
mA
Base current
IB
80
mA
Ta = 25°C
1.2
Collector power
dissipation
Tc = 25°C
PC
5
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 40 V, IE = 0
―
1.0
A
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
―
1.0
A
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
40
―
V
hFE (1)
(Note)
VCE = 2 V, IC = 50 mA
70
―
240
DC current gain
hFE (2)
VCE = 2 V, IC = 800 mA
13
50
―
Collector-emitter saturation voltage
VCE (sat)
IC = 500 mA, IB = 50 mA
―
0.32
0.8
V
Base-emitter voltage
VBE
VCE = 2 V, IC = 500 mA
―
1.3
V
Transition frequency
fT
VCE = 2 V, IC = 0.5 A
50
100
―
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
―
20
―
pF
Note: hFE (1) classification O: 70 to 140, Y: 120 to 240
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1356-Y(Q) | 制造商:Toshiba 功能描述:PNP Bulk |
| 2SA1357-Y(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT PNP 20V 5A 3-Pin TO-126IS |
| 2SA1358-O(Q) | 制造商:Toshiba 功能描述:PNP 制造商:Toshiba 功能描述:PNP Cut Tape |
| 2SA1358Y | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA1358-Y(Q) | 制造商:Toshiba 功能描述:PNP Bulk 制造商:Toshiba 功能描述:Trans GP BJT PNP 120V 1A 3-Pin TO-126IS |
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