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參數(shù)資料
型號: 2SA1358-O
元件分類: 功率晶體管
英文描述: 1 A, 120 V, PNP, Si, POWER TRANSISTOR
封裝: 2-8H1A, 3 PIN
文件頁數(shù): 1/4頁
文件大小: 119K
代理商: 2SA1358-O
2SA1358
2004-07-07
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1358
Audio Frequency Power Amplifier Applications
Complementary to 2SC3421
Suitable for driver of 60 to 80 watts
High breakdown voltage
Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
120
V
Collector-emitter voltage
VCEO
120
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
1
A
Base current
IB
100
mA
Ta = 25°C
1.5
Collector power
dissipation
Tc = 25°C
PC
10
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 120 V, IE = 0
100
nA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
100
nA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
120
V
Emitter-base breakdown voltage
V (BR) EBO
IE = 1 mA, IC = 0
5
V
DC current gain
hFE
(Note)
VCE = 5 V, IC = 100 mA
80
240
Collector-emitter saturation voltage
VCE (sat)
IC = 500 mA, IB = 50 mA
0.40
1.0
V
Base-emitter voltage
VBE
VCE = 5 V, IC = 500 mA
0.77
1.0
V
Transition frequency
fT
VCE = 5 V, IC = 100 mA
120
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
30
pF
Note: hFE classification O: 80 to 160, Y: 120 to 240
Unit: mm
JEDEC
JEITA
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)
相關(guān)PDF資料
PDF描述
2SA1358-Y 1 A, 120 V, PNP, Si, POWER TRANSISTOR
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SA1358-O(Q) 制造商:Toshiba 功能描述:PNP 制造商:Toshiba 功能描述:PNP Cut Tape
2SA1358Y 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SA1358-Y(Q) 制造商:Toshiba 功能描述:PNP Bulk 制造商:Toshiba 功能描述:Trans GP BJT PNP 120V 1A 3-Pin TO-126IS
2SA1359-Y(Q) 制造商:Toshiba 功能描述:PNP 制造商:Toshiba 功能描述:PNP Bulk
2SA1360-O(Q) 制造商:Toshiba 功能描述:PNP 制造商:Toshiba 功能描述:PNP Bulk
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