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參數(shù)資料
| 型號： | 2SA1432R |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | LEAD FREE, 2-7D101A, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 152K |
| 代理商： | 2SA1432R |
2SA1432
2009-12-21
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1432
High Voltage Control Applications
Plasma Display, Nixie Tube Driver Applications
Cathode Ray Tube Brightness Control Applications
High voltage: VCBO = 300 V, VCEO = 300 V
Low saturation voltage: VCE (sat) = 0.5 V (max)
Small collector output capacitance: Cob = 6 pF (typ.)
Complementary to 2SC3672
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
300
V
Collector-emitter voltage
VCEO
300
V
Emitter-base voltage
VEBO
8
V
Collector current
IC
100
mA
Base current
IB
20
mA
Collector power dissipation
PC
1000
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-7D101A
Weight: 0.2 g (typ.)
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| 2SA1432 | 100 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
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| 2SA1433-E | Si, PNP, RF SMALL SIGNAL TRANSISTOR |
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