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參數資料
| 型號： | 2SA1433-F |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Si, PNP, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | MP, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 28K |
| 代理商： | 2SA1433-F |
2SA1433
No.3471-1/3
Ordering number : ENN3471A
80906 / 12506AA MS IM TB-00001973 / O3103TN (KT) / 71598HA (KT) / 5280TA (KOTO)
2SA1433
PNP Epitaxial Planar Silicon Transistor
High-Definition CRT Display Applications
Features
High fT (Gain-Bandwidth Product).
Small reverse transfer capacitance (Cre=1.3pF).
Adoption of FBET process.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
--70
V
Collector-to-Emitter Voltage
VCEO
--60
V
Emitter-to-Base Voltage
VEBO
--4
V
Collector Current
IC
--50
mA
Collector Current (Pulse)
ICP
--100
mA
Collector Dissipation
PC
900
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=--40V, IE=0A
--0.1
A
Emitter Cutoff Current
IEBO
VEB=--3V, IC=0A
--1.0
A
DC Current Gain
hFE
VCE=--10V, IC=--10mA
60*
320*
Gain-Bandwidth Product
fT
VCE=--10V, IC=--10mA
350
700
MHz
Base-to-Collector Time Contact
rbbCc
VCE=--10V, IC=--10mA
8
pF
Output Capacitance
Cob
VCB=--10V, f=1MHz
1.7
pF
Reverse Transfer Capacitance
Cre
VCB=--10V, f=1MHz
1.3
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=--20mA, IB=--2mA
--0.6
V
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=--20mA, IB=--2mA
--1.0
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=--10A, IE=0A
--70
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=--1mA, RBE=∞
--60
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=--10A, IC=0A
--4
V
* : The 2SA1433 is classified by 10mA hFE as follows :
Rank
D
E
F
hFE
60 to 120
100 to 200
160 to 320
SANYO Semiconductors
DATA SHEET
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
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