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參數資料
| 型號： | 2SA1627-M |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 600 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 封裝： | TO-126, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 97K |
| 代理商： | 2SA1627-M |
UTC2SA1627
PNPEPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD
1
QW-R204-010,B
PNP EPITAXIAL SILICON
TRANSISTOR
DESCRIPTION
The UTC 2SA1627 is designed for general purpose
amplifier and high speed switching applications.
FEATURES
*High voltage
*Low collector saturation voltage.
*High-speed switching
TO-126
1
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C )
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-600
V
Collector-Emitter Voltage
VCEO
-600
V
Emitter-Base Voltage
VEBO
-7.0
V
Collector Power Dissipation
PC
1.0
W
Collector Current(DC)
Ic
-1.0
A
Collector Current(PULSE)
Icp *1
-2.0
A
Junction Temperature
Tj
150
°C
Storage Temperature
TSTG
-55 to +150
°C
*1 : PW≦10ms,Duty Cycle≦50%
ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector Cut-Off Current
ICBO
VCB= -600V,IE=0
-10
A
Emitter Cut-Off Current
IEBO
VEB= -7.0V,Ic=0
-10
A
DC Current Gain
hFE1*2
VCE= -5.0V,Ic= -0.1A
30
58
120
DC Current Gain
hFE2*2
VCE= -5.0V,Ic= -0.5A
5
19
Collector-Emitter Saturation Voltage
VCE(sat)*2 Ic= -0.3A,IB= -0.06A
-0.28
-0.5
V
Base-Emitter Saturation Voltage
VBE(sat)*2
Ic= -0.3A,IB= -0.06A
-0.85
-1.2
V
Gain Bandwidth Product
fT
VCE= -10V, IE=0.1A
10
28
MHz
相關PDF資料 |
PDF描述 |
|---|---|
| 2SA1627-L | 1000 mA, 600 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 2SA1627-K | 1000 mA, 600 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 2SA1627L | 1000 mA, 600 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1627K | 1000 mA, 600 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1627M | 1000 mA, 600 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
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| 2SA1643 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA1645-K-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1645-L-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
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