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參數資料
| 型號： | 2SA1627A |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | PNP EPITAXIAL SILICON TRANSISTOR |
| 中文描述： | 進步黨外延硅晶體管 |
| 文件頁數： | 1/3頁 |
| 文件大?。?/td> | 106K |
| 代理商： | 2SA1627A |
UTC 2SA1627A PNP EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R217-004,A
PNP EPITAXIAL SILICON
TRANSISTOR
DESCRIPTION
The UTC 2SA1627A is designed for general purpose
amplifier and high speed switching applications.
FEATURES
*High voltage
*Low collector saturation voltage.
*High-speed switching
TO-126C
1
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS
( Ta=25
°
C )
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-600
V
Collector-Emitter Voltage
V
CEO
-600
V
Emitter-Base Voltage
V
EBO
-7.0
V
Collector Power Dissipation
P
C
1.0
W
Collector Current(DC)
Ic
-1.0
A
Collector Current(PULSE)
Icp
*
1
-2.0
A
°
C
°
C
Junction Temperature
T
j
150
Storage Temperature
*
1
: PW
≦
10ms,Duty Cycle
≦
50%
ELECTRICAL CHARACTERISTICS
(Ta=25
°
C, unless otherwise specified)
T
STG
-55 to +150
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector Cut-Off Current
I
CBO
V
CB
= -600V,I
E
=0
-10
μA
Emitter Cut-Off Current
I
EBO
h
FE1
*
2
h
FE2
*
2
V
CE
(sat)*
2
Ic= -0.3A,I
B
= -0.06A
V
BE
(sat)*
2
Ic= -0.3A,I
B
= -0.06A
V
EB
= -7.0V,Ic=0
-10
μA
DC Current Gain
V
CE
= -5.0V,Ic= -0.1A
30
58
120
DC Current Gain
V
CE
= -5.0V,Ic= -0.5A
4
19
Collector-Emitter Saturation Voltage
-0.28
-1.5
V
Base-Emitter Saturation Voltage
-0.85
-1.2
V
Gain Bandwidth Product
f
T
V
CE
= -10V, I
E
=0.1A
10
28
MHz
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