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參數資料
型號: 2SA1700
廠商: UNISONIC TECHNOLOGIES CO LTD
元件分類: 小信號晶體管
英文描述: 200 mA, 400 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-252
封裝: TO-252, 3 PIN
文件頁數: 1/4頁
文件大小: 188K
代理商: 2SA1700
UTC2SA1700
PNP EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD
1
QW-R209-009,A
HIGH VOLTAGE DRIVER
APPLICATION
FEATURES
*High breakdown voltage.
*Excellent hFE linearity.
TO-252
1
1: BASE 2:COLLECTOR 3:EMITTER
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
-400
V
Collector-Emitter Voltage
VCEO
-400
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
Ic
-200
mA
Collector Current (PULSE)
Icp
-400
mA
1
W
Collector Power Dissipation
Pc
10( Tc=25
°C)
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
-55 ~ +150
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Breakdown Voltage
BVCBO
IC= -10
A,IE=0
-400
V
Collector-Emitter Breakdown Voltage
BVCEO
IC= -1mA, IB=0, RBE=
-400
V
Emitter-Base Breakdown Voltage
BVEBO
IE= -10
A,IC=0
-5
V
Collector Cutoff Current
ICBO
VCB= -300V,IE=0
-0.1
A
Emitter Cutoff Current
IEBO
VEB= -4V,IC=0
-0.1
A
DC Current Transfer Ratio
hFE
VCE= -10V, Ic= -50mA
60
200
Collector-Emitter Saturation Voltage
VCE(sat)
IC= -50mA,IB= -5mA
-0.8
V
Base-Emitter Saturation Voltage
VBE(sat)
IC= -50mA,IB= -5mA
-1.0
V
Output Capacitance
Cob
VCB= -30V,f=1MHz
5
pF
Reverse Transfer Capacitance
Cre
VCB= -30V,f=1MHz
4
pF
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