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參數(shù)資料
型號: 2SA1744
廠商: NEC Corp.
英文描述: PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
中文描述: 進步黨硅外延的高晶體管高速開關
文件頁數(shù): 1/6頁
文件大小: 144K
代理商: 2SA1744
Document No. D13160EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SA1744
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
The 2SA1744 is a power transistor developed for high-speed
switching and features a high h
FE
at Low V
CE(sat)
. This transistor is
ideal for use as a driver in DC/DC converters and actuators.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting
cost.
FEATURES
High h
FE
and low V
CE(sat)
:
h
FE
100 (V
CE
=
2 V, I
C
=
3 A)
V
CE(sat)
0.3 V (I
C
=
8 A, I
B
=
0.4 A)
Full-mold package that does not require an insulating board or
bushing
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
100
V
Collector to emitter voltage
V
CEO
60
V
Emitter to base voltage
V
EBO
7.0
V
Collector current (DC)
I
C(DC)
15
A
Collector current (pulse)
I
C(pulse)
*
30
A
Base current (DC)
I
B(DC)
7.5
A
Total power dissipation
P
T
(Tc = 25
°
C)
30
W
Total power dissipation
P
T
(Ta = 25
°
C)
2.0
W
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55 to +150
°
C
* PW
300
μ
s, duty cycle
10%
相關PDF資料
PDF描述
2SA1744K 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
2SA1744L TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 15A I(C) | TO-220VAR
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