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參數(shù)資料
| 型號(hào)： | 2SA1762 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Silicon PNP epitaxial planer type |
| 中文描述： | 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | M-A1, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 48K |
| 代理商： | 2SA1762 |
1
Transistor
2SA1762
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
Ratings
–80
–80
–5
–1
– 0.5
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= –20V, I
E
= 0
I
C
= –10
μ
A, I
E
= 0
I
C
= –100
μ
A, I
B
= 0
I
E
= –10
μ
A, I
C
= 0
V
CE
= –10V, I
C
= –150mA
V
CE
= –5V, I
C
= –500mA
I
C
= –300mA, I
B
= –30mA
I
C
= –300mA, I
B
= –30mA
V
CB
= –10V, I
E
= 50mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1 MHz
min
–80
–80
–5
130
50
typ
100
– 0.2
– 0.85
85
11
max
– 0.1
330
– 0.4
–1.2
20
Unit
μ
A
V
V
V
V
V
MHz
pF
6.9
±
0.1
0.55
±
0.1
0.45
±
0.05
1
±
0
1
2.5
±
0.1
1.0
1.5
1.5 R0.9
R0.9
R07
0
0.85
3
±
0
2
±
0
2
±
0
1
±
0
4
±
0
4
±
0
2.5
2.5
1
2
3
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
*
h
FE1
Rank classification
Rank
R
S
h
FE1
130 ~ 220
185 ~ 330
Silicon PNP epitaxial planer type
For low-frequency driver amplification
Complementary to 2SC4606
I
Features
G
High collector to emitter voltage V
CEO
.
G
Optimum for the driver stage of a low-frequency and 25 to 30W
output amplifier.
I
Absolute Maximum Ratings
(Ta=25C)
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