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參數資料
| 型號： | 2SA1847-K-AZ |
| 元件分類： | 功率晶體管 |
| 英文描述： | 10 A, 100 V, PNP, Si, POWER TRANSISTOR |
| 文件頁數： | 1/6頁 |
| 文件大小： | 142K |
| 代理商： | 2SA1847-K-AZ |
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1998
Document No. D15593EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SA1847
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
2002
The 2SA1847 is a power transistor developed for high-speed switching and features a high hFE at low VCE(sat).
This transistor is ideal for use as a driver in DC/DC converters and actuators.
In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus
contributing to mounting cost reduction.
FEATURES
Auto-mount possible in radial taping specifications
Resin-molded insulation type package with power rating of 1.8 W in stand-alone conditions
High hFE and low VCE(sat):
VCE(sat) =
0.3 V MAX. @IC = 6.0 V, IB = 0.3 A
hFE
≥ 100
@VCE =
2.0 V, IC = 2.0 A
Fast switching speed
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
VCBO
150
V
Collector to emitter voltage
VCEO
100
V
Emitter to base voltage
VEBO
7.0
V
Collector current (DC)
IC(DC)
10
A
Collector current (pulse)
IC(pulse)
PW
≤ 300
s, duty cycle ≤ 2%
20
A
Base current (DC)
IB(DC)
6.0
A
Total power dissipation
PT
Ta = 25
°C
1.8
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
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