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參數資料
型號: 2SC4827E
元件分類: 功率晶體管
英文描述: 0.2 A, 200 V, NPN, Si, POWER TRANSISTOR
封裝: FLP-3
文件頁數: 1/4頁
文件大小: 39K
代理商: 2SC4827E
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
High Definition CRT Display
Video Output Applications
Ordering number:ENN4717
2SA1853/2SC4827
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82003TN (KT)/91098HA (KT)/62094MT (KOTO) AX-8133 No.4717–1/4
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( ) : 2SA1853
Specifications
Absolute Maximum Ratings at Ta = 25C
Package Dimensions
unit:mm
2084B
[2SA1853/2SC4827]
Applications
High-definition CRT display video output. Wide-
band amplifier.
Features
Adoption of FBET process.
High fT : fT=300MHz.
High breakdown voltage : VCEO=200V.
Small reverse transfer capacitance and excellent
high-frequency characteristic :
Cre=2.2pF/NPN, 2.7pF/PNP.
Possible to offer the 2SA1853/2SC4827 devices in a
tepa reel packaging, which facilitates automatic
incertion.
C
Electrical Characteristics at Ta = 25C
1 : Emitter
2 : Collector
3 : Base
SANYO : FLP
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* : The 2SA1853/2SC4827 are classified by 10mA hFE as follows :
Continued on next page.
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相關PDF資料
PDF描述
2SC4827F 0.2 A, 200 V, NPN, Si, POWER TRANSISTOR
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2SC4833-4000 功能描述:兩極晶體管 - BJT VCEO=400 IC=5 HFE=10 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SC4833-7000 功能描述:兩極晶體管 - BJT VCEO=400 IC=5 HFE=10 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SC4833-7012 功能描述:兩極晶體管 - BJT VCEO=400 IC=5 HFE=10 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SC4833-7100 功能描述:兩極晶體管 - BJT VCEO=400 IC=5 HFE=10 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SC4833-7112 功能描述:兩極晶體管 - BJT VCEO=400 IC=5 HFE=10 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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