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參數(shù)資料
| 型號： | 2SA1858P |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 70 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | ROHS COMPLIANT, TO-92NL-A1, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 234K |
| 代理商： | 2SA1858P |
1
Publication date: March 2004
SJC00035BED
Transistors
2SA1858
Silicon PNP epitaxial planar type
For low-frequency power amplification
■ Features
High collector-emitter voltage (Base open) V
CEO
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
300
V
Collector-emitter voltage (Base open)
VCEO
300
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
70
mA
Peak collector current
ICP
100
mA
Collector power dissipation
PC
1W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC = 100 A, IB = 0
300
V
Emitter-base voltage (Collector open)
VEBO
IE
= 1 A, I
C
= 0
5V
Forward current transfer ratio *
hFE
VCE = 10 V, IC = 5 mA
30
150
Collector-emitter saturation voltage
VCE(sat)
IC = 10 mA, IB = 1 mA
0.6
V
Transition frequency
fT
VCB
= 10 V, I
E
= 10 mA, f = 200 MHz
50
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
7
pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
P
Q
hFE
30 to 100
60 to 150
Unit: mm
2.3
±
0.2
5.0±0.2
0.7±0.1
4.0±0.2
8.0
±
0.2
0.7
±
0.2
13.5
±
0.5
2.54±0.15
(1.27)
0.45
+0.2
–0.1
0.45
+0.15
–0.1
13
2
1: Emitter
2: Collector
3: Base
TO-92NL-A1 Package
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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