欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號(hào): 2SA1890G-R
廠商: PANASONIC CORP
元件分類: 小信號(hào)晶體管
英文描述: 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: ROHS COMPLIANT, MINIP3-F2, 3 PIN
文件頁數(shù): 1/2頁
文件大小: 207K
代理商: 2SA1890G-R
Transistors
1
Publication date: September 2007
SJD00327AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA1890G
Silicon PNP epitaxial planar type
For low-frequency output amplification
Complementary to 2SC5026G
■ Features
Low collector-emitter saturation voltage V
CE(sat)
High collector-emitter voltage (Base open) V
CEO
Mini power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the magazine
packing.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
80
V
Collector-emitter voltage (Base open)
VCEO
80
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
1A
Peak collector current
ICP
1.5
A
Collector power dissipation *
PC
1W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = 10 A, IE = 0
80
V
Collector-emitter voltage (Base open)
VCEO
IC
= 1 mA, I
B
= 0
80
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 A, IC = 0
5V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 40 V, IE = 0
0.1
A
Forward current transfer ratio
hFE1 *
2
VCE =
2 V, I
C =
100 mA
120
340
hFE2 *
1
VCE = 2 V, IC = 500 mA
60
Collector-emitter saturation voltage
VCE(sat)
IC = 500 mA, IB = 50 mA
0.2
0.3
V
Base-emitter saturation voltage *
1
VBE(sat)
IC
= 500 mA, I
B
= 50 mA
0.85
1.2
V
Transition frequency
fT
VCB = 10 V, IE = 50 mA, f = 200 MHz
120
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
15
30
pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Rank
R
S
hFE1
120 to 240
170 to 340
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the
board thickness of 1.7 mm for the collector portion
■ Package
Code
MiniP3-F2
Pin Name
1: Base
2: Collector
3: Emitter
■ Marking Symbol: 1Z
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相關(guān)PDF資料
PDF描述
2SA1892-Y 3 A, 50 V, PNP, Si, POWER TRANSISTOR
2SA1892 3 A, 50 V, PNP, Si, POWER TRANSISTOR
2SA1892-O 3 A, 50 V, PNP, Si, POWER TRANSISTOR
2SA1899 800 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1900T100/Q 1 A, 50 V, PNP, Si, POWER TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SA1890GRL 功能描述:TRANS PNP 80VCEO 1A MINIP-3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)(最大):1A 電壓 - 集電極發(fā)射極擊穿(最大):30V Ib、Ic條件下的Vce飽和度(最大):200mV @ 100mA,1A 電流 - 集電極截止(最大):100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3(TO-236) 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR
2SA1892-Y(Q) 制造商:Toshiba 功能描述:PNP Bulk
2SA1896STTD 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SA1897 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SA1900T100Q 功能描述:兩極晶體管 - BJT PNP 50V 1A SO-89 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
主站蜘蛛池模板: 边坝县| 成都市| 封丘县| 尤溪县| 垦利县| 海晏县| 枣强县| 定日县| 江油市| 昭苏县| 涟源市| 宣威市| 东光县| 福清市| 湟源县| 屏东市| 沐川县| 普陀区| 古蔺县| 永州市| 二连浩特市| 绥棱县| 遵义县| 家居| 彭山县| 兴海县| 南开区| 峨边| 巫山县| 英山县| 新龙县| 云和县| 额尔古纳市| 仙居县| 定日县| 洛南县| 固阳县| 墨江| 游戏| 威宁| 阜新|