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參數(shù)資料
| 型號(hào)： | 2SA1905-Y |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5 A, 50 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | LEAD FREE, 2-8M1A, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 138K |
| 代理商： | 2SA1905-Y |
2SA1905
2006-11-09
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1905
High-Current Switching Applications.
Low collector saturation voltage: VCE (sat) = 0.4 V (max)
High speed switching time: tstg = 1.0 μs (typ.)
Complementary to 2SC5076
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
5
A
Base current
IB
1
A
Collector power dissipation
PC
1.3
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-8M1A
Weight: 0.55 g (typ.)
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相關(guān)代理商/技術(shù)參數(shù) |
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