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參數資料
| 型號： | 2SA1926 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 3000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | LEAD FREE, 2-7D101A, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 100K |
| 代理商： | 2SA1926 |
2SC4919-S
No. A1086-1/4
Features
Ultrasmall-sized package permitting applied sets to be made small and slim.
Small output capacitance.
Low collector-to-emitter saturation voltage.
Low ON resistance.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
25
V
Collector-to-Emitter Voltage
VCEO
15
V
Emitter-to-Base Voltage
VEBO
15
V
Collector Current
IC
100
mA
Collector Current (Pulse)
ICP
200
mA
Base Current
IB
20
mA
Collector Dissipation
PC
150
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=15V, IE=0A
0.1
μA
Emitter Cutoff Current
IEBO
VEB=4V, IC=0A
0.1
μA
DC Current Gain
hFE
VCE=2V, IC=5mA
800
3200
Gain-Bandwidth Product
fT
VCE=5V, IC=10mA
240
MHz
Output Capacitance
Cob
VCB=10V, f=1MHz
1.4
pF
Continued on next page.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENA1086
70208LA TI IM TC-00001496
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
's products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
SANYO Semiconductors
DATA SHEET
2SC4919-S
NPN Epitaxial Planar Silicon Transistor
Muting Circuit Applications
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SA1930(LBS2MATQ,M | 功能描述:TRANS PNP 2A 180V TO220-3 制造商:toshiba semiconductor and storage 系列:- 包裝:散裝 零件狀態:停產 晶體管類型:PNP 電流 - 集電極（Ic）（最大值）:2A 電壓 - 集射極擊穿（最大值）:180V 不同?Ib，Ic 時的?Vce 飽和值（最大值）:1V @ 100mA，1A 電流 - 集電極截止（最大值）:5μA（ICBO） 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:100 @ 100mA，5V 功率 - 最大值:2W 頻率 - 躍遷:200MHz 工作溫度:150°C（TJ） 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商器件封裝:TO-220NIS 標準包裝:1 |
| 2SA1930(ONK,Q,M) | 功能描述:TRANS PNP 2A 180V TO220-3 制造商:toshiba semiconductor and storage 系列:- 包裝:散裝 零件狀態:停產 晶體管類型:PNP 電流 - 集電極（Ic）（最大值）:2A 電壓 - 集射極擊穿（最大值）:180V 不同?Ib，Ic 時的?Vce 飽和值（最大值）:1V @ 100mA，1A 電流 - 集電極截止（最大值）:5μA（ICBO） 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:100 @ 100mA，5V 功率 - 最大值:2W 頻率 - 躍遷:200MHz 工作溫度:150°C（TJ） 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商器件封裝:TO-220NIS 標準包裝:1 |
| 2SA1930(Q) | 制造商:Toshiba America Electronic Components 功能描述:Semi,Bipolar,Transistor,2SA1930(Q),PNP,Power,Low voltage |
| 2SA1930(Q,M) | 功能描述:兩極晶體管 - BJT PNP 180V 2A Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA1930,CKQ(J | 功能描述:TRANS PNP 2A 180V TO220-3 制造商:toshiba semiconductor and storage 系列:- 包裝:散裝 零件狀態:停產 晶體管類型:PNP 電流 - 集電極（Ic）（最大值）:2A 電壓 - 集射極擊穿（最大值）:180V 不同?Ib，Ic 時的?Vce 飽和值（最大值）:1V @ 100mA，1A 電流 - 集電極截止（最大值）:5μA（ICBO） 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:100 @ 100mA，5V 功率 - 最大值:2W 頻率 - 躍遷:200MHz 工作溫度:150°C（TJ） 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商器件封裝:TO-220NIS 標準包裝:1 |
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