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參數資料
| 型號： | 2SA1988 |
| 廠商： | NEC Corp. |
| 英文描述： | PNP SILICON TRANSISTOR POWER AMPLIFIER INDUSTRIAL USE |
| 中文描述： | 進步黨硅晶體管功率放大器工業用 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 47K |
| 代理商： | 2SA1988 |
1996
DATA SHEET
Silicon Power Transistor
2SA1988
DESCRIPTION
The 2SA1988 is PNP Silicon Power Transistor that
designed for audio frequency power amplifier.
FEATURES
High Voltage V
CEO
=
200 V
DC Current Gain h
FE
= 70 to 200
TO-3P Package
ORDERING INFORMATION
Type Number
Package
2SA1988
MP-88
PNP SILICON TRANSISTOR
POWER AMPLIFIER
INDUSTRIAL USE
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (pulse)
Total Power Dissipantion
JunctionTemperature
Storage Tempreature
*1 PW
≤
300
μ
s, Duty Cycle
≤
10 %
V
CBO
V
CEO
V
EBO
I
C (DC)
I
C (pulse)
*1
P
2
*2
T
J
T
stg
200
200
5.0
7.0
-10
100
150
V
V
V
A
A
W
°
C
°
C
55 to +150
*2 T
C
= 25
°
C
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
I
CBO
50
μ
A
V
CB
=
200 V, I
E
= 0
Emitter Cutoff Current
I
EBO
50
μ
A
V
EB
=
3.0 V, I
C
= 0
DC Current Gain
h
FE1
70
200
V
CE
=
5.0 V, I
C
=
1.0 A
DC Current Gain
h
FE2
20
V
CE
=
5.0 V, I
C
=
3.5 A
Collector Saturation Voltage
V
CE (sat)
0.6
2.0
V
I
C
=
5.0 V, I
E
=
0.5 V
Base Saturation Voltage
V
BE (sat)
1.3
2.0
V
I
C
=
5.0 V, I
E
=
0.5 V
Gain Band width Product
f
T
40
MHz
V
CE
=
5.0 V, I
C
= 1.0 mA
Output Capacitance
C
ob
270
pF
V
CB
=
10 V, I
C
= 0, f = 1.0 MHz
Pulse Test PW
≤
350
μ
s, Duty Cycle
≤
2 %
PACKAGE DIMENSIONS
The information in this document is subject to change without notice.
MP-88
1.Base
2.Collector
3.Emitter
4.Fin (Collector)
1
2
3
15.7 MAX.
3.2±0.2
φ
4
5
1
3
2
1
2.2±0.2
5.45
5.45
1.0±0.2
4
4.7 MAX.
1.5
2.8±0.1
0.6±0.1
Document No. D11176EJ1V0DS00 (1st edition)
Date Published May 1996 P
Printed in Japan
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