
Transistors
Publication date : December 2004
SJC00328AED
1
2SA2082
Silicon PNP epitaxial planar type
For high speed switching
Features
High speed switching
Low collector-emitter saturation voltage VCE(sat)
Suitable for high-density mounting and douwsizing of the equipment for
ultraminiature leadless package
Package: 0.6 mm × 1.0 mm (hight 0.39 mm)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
–10
V
Collector-emitter voltage (Base open)
VCEO
–10
V
Emitter-base voltage (Collector open)
VEBO
–4
V
Collector current
IC
–50
mA
Peak collector current
ICP
–100
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
°
C
Storage temperature
Tstg
–55 to +125
°
C
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base cutoff current (Emitter open)
ICBO
VCB = –8 V, IE = 0
– 0.1
A
Emitter-base cut-off current (Collector open)
IEBO
VEB = –3 V, IC = 0
– 0.1
A
Forward current transfer ratio
hFE1
VCE = –1 V, IC = –10 mA
50
150
hFE2
VCE = –1 V, IC = –1 mA
30
Collector-emitter saturation voltage
VCE(sat) IC = –10 mA, IB = –1 mA
– 0.1
– 0.2
V
Transition frequency
fT
VCB = –10 V, IE = 10 mA, f = 200 MHz
800
1500
MHz
Collector output capacitance
(Common base, input open circuited)
Cob
VCB = –5 V, IE = 0, f = 1 MHz
2.2
pF
Turn-on time
ton
Switching time measurement circuit
12
ns
Turn-off time
toff
20
ns
Storage time
ts
19
ns
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Unit: mm
1: Base
2: Emitter
3: Collector
ML3-N2 Package
0.60
±0.0
5
1.00±0.05
2
1
3
0.39+0.01
0.03
0.25±0.05
0.5
0
±0.05
0.65±0.01
0.15
±0.0
5
2
1
0.35
±0.0
1
0.05±0.03
0.0
5
±0.0
3
Marking Symbol : 4N
This product complies with the RoHS Directive (EU 2002/95/EC).