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參數資料
| 型號： | 2SA2164 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon PNP epitaxial planar type For high-frequency amplification |
| 中文描述： | 30 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, SSSMINI3-F2, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 463K |
| 代理商： | 2SA2164 |
Transistors
Publication date : December
2004
SJC
00330
AED
1
2SA2164
Silicon PNP epitaxial planar type
For high-frequency amplification
Features
High transfer ratio f
T
SSS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing.
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
–
30
V
Collector-emitter voltage (Base open)
V
CEO
–
20
V
Emitter-base voltage (Collector open)
V
EBO
–
5
V
Collector current
I
C
–
30
mA
Collector power dissipation
P
C
100
mW
Junction temperature
T
j
125
°
C
Storage temperature
T
stg
–
55
to +
125
°
C
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Base-emitter voltage
V
BE
V
CE
= –
10
V, I
C
= –
1
mA
–
0
.
7
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= –
10
V, I
E
=
0
–
0
.
1
μ
A
Collector-emitter cut-off current (Base open)
I
CEO
V
CE
= –
20
V, I
B
=
0
–
100
μ
A
Emitter-base cut-off current (Collector open)
I
EBO
V
EB
= –
5
V, I
C
=
0
–
10
μ
A
Forward current transfer ratio
h
FE
V
CB
= –
10
V, I
E
=
1
mA
70
220
Collector-emitter saturation voltage
V
CE(sat)
I
C
= –
10
mA, I
B
= –
1
mA
–
0
.
1
V
Transition frequency
f
T
V
CB
= –
10
V, I
E
=
1
mA, f =
200
MHz
150
300
MHz
Noise figure
NF
V
CB
= –
10
V, I
E
=
1
mA, f =
5
MHz
2
.
8
dB
Reverse transfer impedance
Z
rb
V
CB
= –
10
V, I
E
=
1
mA, f =
2
MHz
22
Common-emitter reverse transfer capacitance
C
re
V
CB
= –
10
V, I
E
=
1
mA, f =
10
.
7
MHz
1
.
2
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C
7030
measuring methods for transistors.
Unit: mm
1: Base
2: Emitter
3: Collector
SSSMini3-F1 Package
1
±
0
0
±
0
0
0
5
0
0
±
0
0
0.33
(0.40)
(0.40)
0.80
±
0.05
1.20
±
0.05
1
2
3
5°
+0.05
0.10
+0.05
0.23
+0.05
Marking Symbol : E
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| 2SA216400L | 功能描述:TRANS PNP 20VCEO 30MA SSSMINI3P RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SA2166 | 制造商:ISAHAYA 制造商全稱:Isahaya Electronics Corporation 功能描述:FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
| 2SA2166_08 | 制造商:ISAHAYA 制造商全稱:Isahaya Electronics Corporation 功能描述:FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
| 2SA2166_10 | 制造商:ISAHAYA 制造商全稱:Isahaya Electronics Corporation 功能描述:FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
| 2SA2167 | 制造商:ISAHAYA 制造商全稱:Isahaya Electronics Corporation 功能描述:FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
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