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參數(shù)資料
型號: 2SA2174G
廠商: PANASONIC CORP
元件分類: 小信號晶體管
英文描述: 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: ROHS COMPLIANT, SSMINI3-F3, 3 PIN
文件頁數(shù): 1/4頁
文件大小: 433K
代理商: 2SA2174G
Transistors
Publication date: May 2007
SJC00386AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA2174G
Silicon PNP epitaxial planar type
For general amplication
Complementary to 2SC6054G
Features
High forward current transfer ratio hFE
SS-Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing.
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
-
60
V
Collector-emitter voltage (Base open)
VCEO
-
50
V
Emitter-base voltage (Collector open)
VEBO
-
7
V
Collector current
IC
-
100
mA
Peak collector current
ICP
-
200
mA
Collector power dissipation
PC
125
mW
Junction temperature
Tj
125
°
C
Storage temperature
Tstg
-
55 to +125
°
C
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = -10 mA, IE = 0
-
60
V
Collector-emitter voltage (Base open)
VCEO
IC = -2 mA, IB = 0
-
50
V
Emitter-base voltage (Collector open)
VEBO
IE = -10 mA, IC = 0
-
7
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = -20 V, IE = 0
-
0.1
m
A
Collector-emitter cutoff current (Base open)
ICEO
VCE = -10 V, IB = 0
-
100
m
A
Forward current transfer ratio
hFE
VCE = -10 V, IC = -2 mA
160
460
Collector-emitter saturation voltage
VCE(sat) IC = -100 mA, IB = -10 mA
-
0.2
-
0.5
V
Transition frequency
fT
VCB = -10 V, IE = 1 mA, f = 200 MHz
80
MHz
Collector output capacitance
(Common base, input open circuited)
Cob
VCB = -10 V, IE = 0, f = 1 MHz
2.2
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Package
Code
SSMini3-F3
Marking Symbol: 7L
Pin Name
1. Base
2. Emitter
3. Collector
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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參數(shù)描述
2SA2174G0L 功能描述:TRANS PNP 50VCEO 100MA SSMINI-3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)(最大):1A 電壓 - 集電極發(fā)射極擊穿(最大):30V Ib、Ic條件下的Vce飽和度(最大):200mV @ 100mA,1A 電流 - 集電極截止(最大):100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3(TO-236) 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR
2SA2174J0L 功能描述:TRANS PNP 50VCEO 100MA SSMINI-3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)(最大):1A 電壓 - 集電極發(fā)射極擊穿(最大):30V Ib、Ic條件下的Vce飽和度(最大):200mV @ 100mA,1A 電流 - 集電極截止(最大):100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3(TO-236) 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR
2SA2179 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:PNP Epitaxial Planar Silicon Transistor 50V / 13A High-Speed Switching Applications
2SA2180 功能描述:TRANS PNP 50V 5A TO-220ML RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)(最大):1A 電壓 - 集電極發(fā)射極擊穿(最大):30V Ib、Ic條件下的Vce飽和度(最大):200mV @ 100mA,1A 電流 - 集電極截止(最大):100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3(TO-236) 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR
2SA2181 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:PNP Epitaxial Planar Silicon Transistor 50V / 15A High-Speed Switching
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