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參數資料
型號: 2SA2183
元件分類: 功率晶體管
英文描述: 5 A, 60 V, PNP, Si, POWER TRANSISTOR
封裝: LEAD FREE, 2-10U1A, SC-67, 3 PIN
文件頁數: 1/5頁
文件大小: 198K
代理商: 2SA2183
2SA2183
2006-11-16
1
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2183
High Current Switching Applications
Low collector-emitter saturation : VCE(sat) = 1.0 V(max)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
60
V
Emitter-base voltage
VEBO
7
V
DC
IC
5.0
A
Collector current
Pulse
ICP
8.0
A
Base current
IB
0.5
A
Ta = 25°C
2
W
Collector power
dissipation
Tc = 25°C
PC
20
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1A
Weight: 1.7 g (typ.)
1 : Base
2 : Collector
3 : Emitter
相關PDF資料
PDF描述
2SA2200 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA2205 2000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA2205 2000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA2205-TL 2000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA2209-TL 15000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
相關代理商/技術參數
參數描述
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