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參數(shù)資料
| 型號(hào)： | 2SA733-R |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | SC-43B, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 268K |
| 代理商： | 2SA733-R |
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PNP SILICON TRANSISTOR
2SA733
PNP SILICON TRANSISTOR
DATA SHEET
Document No. D10868EJ7V0DS00 (7th edition)
(Previous No. TC-3004B)
Date Published March 2004 N CP(K)
Printed in Japan
c
The mark
shows major revised points.
1995
DESCRIPTION
The 2SA733 is designed for use in diver stage of AF amplifier.
FEATURES
High hFE and Excellent Linearity: 200 TYP.
hFE (VCE =
6.0 V, IC = 1.0 mA)
ABSOLUTE MAXIMUM RATINGS
Maximum Temperature
Storage Temperature
55 to +150°C
Junction Temperature
+150
°C Maximum
Maximum Power Dissipations (TA = 25
°C)
Total Power Dissipation
250 mW
Maximum Voltages and Currents (TA = 25
°C)
VCBO
Collector to Base Voltage
60 V
VCEO
Collector to Emitter Voltage
50 V
VEBO
Emitter to Base Voltage
5.0 V
IC
Collector Current
100 mA
IB
Base Current
20 mA
Note Pulse Test PW
≤ 350
s, Duty Cycle ≤ 2%
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
CHARACTERISTIC
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
DC Current Gain
hFE
VCE =
6.0 V, IC = 1.0 mA
90
200
600
Gain Bandwidth Product
fT
VCE =
6.0 V, IE = 10 mA
180
MHz
Output Capacitance
Cob
VCB =
10 V, IE = 0, f = 1.0 MHz
4.5
pF
Collector Cutoff Current
ICBO
VCB =
60 V, IE = 0 A
0.1
A
Emitter Cutoff Current
IEBO
VEB =
5.0 V, IC = 0 A
0.1
A
Base to Emitter Voltage
VBE
ICE =
6.0 A, IC = 1.0 mA
0.58
0.62
0.68
V
Collector Saturation Voltage
VCE(sat)
IC =
100 mA, IB = 10 mA
0.18
0.3
V
CLASSIFICATION OF hFE
Rank
R
Q
P
E
Range
90 to 180
135 to 270
200 to 400
300 to 600
Remark hFE Test Conditions: VCE =
6.0 V, IC = 1.0 mA
PACKAGE DRAWING (Unit: mm)
1.27
2.54
1.77
MAX.
4.2
MAX.
13
12.7
MIN.
5.5
MAX.
5.2 MAX.
φ
0.5
2
1: Emitter
2: Collector
3: Base
EIAJ:
SC-43B
JEDEC: TO-92
IEC:
PA33
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SA733P | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA733 | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA733 | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA733-A | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA739 | 3 A, 400 V, PNP, Si, POWER TRANSISTOR, TO-3 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA733-R(A) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA733-R-AE3-R | 制造商:UTC-IC 制造商全稱(chēng):UTC-IC 功能描述:LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR |
| 2SA733T | 制造商:SECOS 制造商全稱(chēng):SeCoS Halbleitertechnologie GmbH 功能描述:PNP Plastic Encapsulated Transistor |
| 2SA733-TQ | 制造商:Panasonic Industrial Company 功能描述:TRANSISTORSUB P-2SA733TQ |
| 2SA733-X-AE3-R | 制造商:UTC-IC 制造商全稱(chēng):UTC-IC 功能描述:LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR |
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