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參數資料
| 型號： | 2SB1274 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | 60V/3A Low-Frequency Power Amplifier Applications |
| 中文描述： | 60V/3A低頻功率放大器應用 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 34K |
| 代理商： | 2SB1274 |
2SB1274/2SD1913
No.2246-1/4
Applications
General power amplifier.
Features
Wide ASO (Adoption of MBIT process).
Low saturation voltage.
High reliability.
High breakdown voltage.
Micaless package facilitating mounting.
Specifications
( ):2SB1274
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VCBO
VCEO
VEBO
IC
ICP
Conditions
Ratings
Unit
V
V
V
A
A
W
W
°
C
°
C
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
(
)60
(
)60
(
)6
(
)3
(
)8
Collector Dissipation
PC
2
Tc=25
°
C
20
150
Junction Temperature
Storage Temperature
Tj
Tstg
55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
(--)100
(--)100
Unit
Collector Cutoff Current
Emitter Cutoff Current
ICBO
IEBO
VCB=(--)40V, IE=0
VEB=(--)4V, IC=0
μ
A
μ
A
Continued on next page.
Ordering number : ENN2246B
2SB1274/2SD1913
60V/3A Low-Frequency
Power Amplifier Applications
Package Dimensions
unit : mm
2041A
[2SB1274/2SD1913]
D2000 TS IM 8-2055
PNP/NPN Epitaxial Planar Silicon Transistors
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
1.6
1.2
0.75
1
1
10.0
1
5
3.2
7
3
2.55
2.55
2.4
4.5
2.8
0.7
2.55
2.55
2
1 2
3
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
相關PDF資料 |
PDF描述 |
|---|---|
| 2SD1913 | 60V/3A Low-Frequency Power Amplifier Applications |
| 2SB1275 | Power Transistor (−160V , −1.5A) |
| 2SB1236A | Power Transistor (−160V , −1.5A) |
| 2SB1295 | Low-Frequency General-Purpose Amp Applications |
| 2SD1935 | Low-Frequency General-Purpose Amp Applications |
相關代理商/技術參數 |
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| 2SB1274R | 功能描述:TRANS PNP 60V 3A TO-220ML RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SB1274S | 功能描述:TRANS PNP 60V 3A TO-220ML RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SB1275TLP | 功能描述:兩極晶體管 - BJT PNP 160V 1.5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SB1278 | 制造商:Distributed By MCM 功能描述:SUB ONLY ROHM TRANSISTOR FTL -80V -.7A .75W ECB |
| 2SB1279 | 制造商:Distributed By MCM 功能描述:SUB ONLY ROHM TRANSISTOR FTL -15V -.2A .3W ECB |
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