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參數資料
| 型號： | 2SB1275TL/P |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1.5 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CPT3, SC-63, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 70K |
| 代理商： | 2SB1275TL/P |
2SB1275 / 2SB1236A
Transistors
Power Transistor (
160V , 1.5A)
2SB1275 / 2SB1236A
!Features
1) High breakdown voltage.(BVCEO
= 160V)
2) Low collector output capacitance.
(Typ. 30pF at VCB
= 10V)
3) High transition frequency.(fT
= 50MHZ)
4) Complements the 2SD1918 / 2SD1857A.
!Absolute maximum ratings
(Ta = 25
°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
160
5
1.5
1
150
55+150
Unit
V
A(DC)
3
2
1
A(Pulse)
W(Tc
=25
°C)
W
10
2SB1275
2SB1236A
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
power
dissipation
Junction temperature
Storage temperature
1 Single pulse Pw
=100ms
2 Printed circuit board 1.7mm thick, collector plating 1cm
2 or larger.
!External dimensions
(Units : mm)
EIAJ : SC-63
ROHM : CPT3
ROHM : ATV
2SB1236A
2SB1275
0.45
(2) Collector
1.05
(3) Base
Taping specifications
(1) Emitter
0.5
(1)
0.65Max.
2.54
(2)
2.54
(3)
6.8
1.0
14.5
0.9
4.4
2.5
2.3
0.5
1.0
0.5
9.5
2.5
0.8Min.
1.5
6.5
2.3
( 2
)
( 3
)
C0.5
0.65
0.9
( 1
)
0.75
2.3
0.9
1.5
5.5
(3) Emitter(Source)
(2) Collector(Drain)
(1) Base(Gate)
5.1
!Packaging specifications and hFE
Type
2SB1275
CPT3
NP
TL
2500
2SB1236A
ATV
PQ
TV2
2500
Package
hFE
Code
Basic ordering unit (pieces)
!Electrical characteristics
(Ta = 25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
fT
Cob
160
5
56
50
30
1
2
180
V
A
V
hFE
82
270
2SB1275
2SB1236A
MHz
pF
IC
= 50A
IC
= 1mA
IE
= 50A
VCB
= 120V
VEB
= 4V
IC/IB
= 1A/0.1A
VBE(sat)
1.5
V
IC/IB
=1A/0.1A
VCE
= 5V , IC = 0.1A
VCE
= 5V , IE = 0.1A , f = 30MHz
VCB
= 10V , IE =0A , f = 1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
Transition frequency
Output capacitance
Base-emitter saturation voltage
Measured using pulse current.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SB1278 | 制造商:Distributed By MCM 功能描述:SUB ONLY ROHM TRANSISTOR FTL -80V -.7A .75W ECB |
| 2SB1279 | 制造商:Distributed By MCM 功能描述:SUB ONLY ROHM TRANSISTOR FTL -15V -.2A .3W ECB |
| 2SB1282-4100 | 功能描述:達林頓晶體管 V=-100 IC=4 HFE=1500 RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2SB1283 | 制造商:Shindengen 功能描述: |
| 2SB1284-4000 | 功能描述:達林頓晶體管 VCEO=-100 IC=-10 RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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