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參數(shù)資料
| 型號(hào)： | 2SB1285 |
| 廠商： | Shindengen Electric Manufacturing Company, Ltd. |
| 英文描述： | Darlington Transistor(-15A PNP) |
| 中文描述： | 達(dá)林頓晶體管（- 15A條新進(jìn)步黨） |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大小： | 415K |
| 代理商： | 2SB1285 |
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
RATINGS
SHINDENGEN
OUTLINE DIMENSIONS
Unit : mm
Case : MTO-3P
Darlington Transistor
-15A PNP
2SB1285
(T15J10)
●
Absolute Maximum Ratings
Item
Symbol
Tstg
Tj
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
I
BP
P
T
TOR
Conditions
Ratings
-55
～
+
1
50
+
1
50
-
1
00
-
1
00
-7
-
1
5
-22
-
1
-2
1
00
0.8
Unit
℃
℃
V
V
V
A
A
A
A
W
N
m
Storage Temperature
Junction Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current DC
Collector Current Peak
Base Current DC
Base Current Peak
Total Transistor Dissipation
Mounting Torque
Tc = 25
℃
(Recommended torque : 0.5N
m
）
●
Electrical Characteristics (Tc=25
℃
)
Item
Symbol
I
CBO
I
CEO
I
EBO
h
FE
Conditions
Ratings
Max -0.
1
Max -0.
1
Max -5
Min
1
,500
Max
1
5,000
Max -
1
.5
Max -2.0
Max
1
.25
TYP 20
Max
1
Unit
mA
Collector Cutoff Current
V
CB
= -
1
00V
V
CE
= -
1
00V
V
EB
= -7V
V
CE
= -3V, I
C
= -
1
0A
Emitter Cutoff Current
mA
DC Current Gain
Collector to Emitter Saturation Voltage
V
CE
(sat)
V
BE
(sat)
θ
jc
f
T
ton
I
C
= -
1
0A
I
B
= -20mA
Junction to case
V
CE
=
1
0V, I
C
= -
1
.5A
V
V
Base to Emitter Saturation Voltage
Thermal Resistance
Transition Frequency
Turn on Time
℃
/W
MHz
I
C
= -
1
5A
I
B
1
= I
B2
= -20mA
R
L
= 2
Ω
V
BB2
= -4V
Storage Time
ts
Max 4
μ
s
Fall Time
tf
Max 2
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