欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: 2SB1288P
廠商: PANASONIC CORP
元件分類: 小信號晶體管
英文描述: 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: ROHS COMPLIANT, TO-92L-A1, 3 PIN
文件頁數: 1/3頁
文件大小: 236K
代理商: 2SB1288P
Transistors
1
Publication date: February 2004
SJC00075BED
2SB1288
Silicon PNP epitaxial planar type
For low-frequency power amplification
For DC-DC converter
For stroboscope
■ Features
Low collector-emitter saturation voltage V
CE(sat)
Large collector current I
C
Allowing supply with the radial taping
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
30
V
Collector-emitter voltage (Base open)
VCEO
20
V
Emitter-base voltage (Collector open)
VEBO
7V
Collector current
IC
5A
Peak collector current
ICP
10
A
Collector power dissipation
PC
1W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
■ Electrical Characteristics T
a = 25°C ± 3°C
Rank
P
Q
R
hFE
90 to 135
120 to 205
180 to 625
Unit: mm
1: Emitter
2: Collector
3: Base
TO-92NL-A1 Package
2.3
±
0.2
5.0±0.2
0.7±0.1
4.0±0.2
8.0
±
0.2
0.7
±
0.2
13.5
±
0.5
2.54±0.15
(1.27)
0.45
+0.2
–0.1
0.45
+0.15
–0.1
13
2
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC = 1 mA, IB = 0
20
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 A, IC = 0
7V
Collector-base cutoff current (Emitter open)
ICBO
VCB
= 10 V, I
E
= 0
100
nA
Emitter-base cutoff current (Collector open)
IEBO
VEB = 5 V, IC = 0
100
nA
Forward current transfer ratio *
1, 2
hFE
VCE = 2 V, IC = 2 A
90
625
Collector-emitter saturation voltage *
1
VCE(sat)
IC
= 3 A, I
B
= 0.1 A
1V
Transition frequency
fT
VCB = 6 V, IE = 50 mA, f = 200 MHz
120
MHz
Collector output capacitance
Cob
VCB = 20 V, IE = 0, f = 1 MHz
85
pF
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相關PDF資料
PDF描述
2SB1290/D 7 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220FP
2SB1290 7 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220FP
2SB1290D 7 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220FP
2SB1301-T2 3000 mA, 16 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1301-T2ZR 3000 mA, 16 V, PNP, Si, SMALL SIGNAL TRANSISTOR
相關代理商/技術參數
參數描述
2SB1290 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SB1295 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTORSC-59 -15V -.8A .2WSURFACE MOUNT
2SB12990P 功能描述:TRANS PNP 60VCEO 3A TO-220F RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)(最大):1A 電壓 - 集電極發射極擊穿(最大):30V Ib、Ic條件下的Vce飽和度(最大):200mV @ 100mA,1A 電流 - 集電極截止(最大):100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應商設備封裝:SOT-23-3(TO-236) 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR
2SB1299P 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SB1301-T2 制造商:NEC Electronics Corporation 功能描述:
主站蜘蛛池模板: 嫩江县| 江山市| 电白县| 胶州市| 吴旗县| 民勤县| 特克斯县| 阜宁县| 鄂伦春自治旗| 赤水市| 安顺市| 阿鲁科尔沁旗| 故城县| 惠水县| 建湖县| 深水埗区| 田林县| 台南县| 凤台县| 牟定县| 郎溪县| 邛崃市| 潞城市| 上犹县| 临沭县| 会泽县| 新龙县| 南宫市| 庆安县| 彭水| 图木舒克市| 钦州市| 那坡县| 汝州市| 青田县| 兴化市| 翁牛特旗| 社会| 蓬安县| 嘉定区| 内丘县|