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參數資料
型號: 2SB1302-S
元件分類: 功率晶體管
英文描述: 5 A, 20 V, PNP, Si, POWER TRANSISTOR
封裝: PCP, 3 PIN
文件頁數: 1/4頁
文件大小: 80K
代理商: 2SB1302-S
2SB1302
No.2555-1/4
Applications
DC-DC converters, motor drivers, relay drivers, lamp drivers.
Features
Adoption of FBET, MBIT processes.
Low collector-to-emitter saturation voltage.
Large current capacity.
Fast switching speed.
Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
--25
V
Collector-to-Emitter Voltage
VCEO
--20
V
Emitter-to-Base Voltage
VEBO
--5
V
Collector Current
IC
--5
A
Collector Current (Pulse)
ICP
--8
A
Collector Dissipation
PC
Mounted on a ceramic board (250mm2
0.8mm)
1.3
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Marking : BJ
www.semiconductor-sanyo.com/network
Ordering number : EN2555B
31710EA TK IM / 10904TN (KT)/O1598HA (KT)/D2680MO/4097TA, TS
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
's products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
SANYO Semiconductors
DATA SHEET
2SB1302
PNP Epitaxial Planar Silicon Transistor
High-Current Switching Applications
相關PDF資料
PDF描述
2SB1308R 3000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1308Q 3000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1317Q 15 A, 180 V, PNP, Si, POWER TRANSISTOR
2SB1318-K 3000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1318-M 3000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR
相關代理商/技術參數
參數描述
2SB1302S-TD-E 功能描述:兩極晶體管 - BJT BIP PNP 5A 20V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SB1302T-TD-E 功能描述:兩極晶體管 - BJT BIP PNP 5A 20V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SB1308T100P 功能描述:兩極晶體管 - BJT PNP 20V 3A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SB1308T100Q 功能描述:兩極晶體管 - BJT PNP 20V 3A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SB1308T100R 功能描述:兩極晶體管 - BJT PNP 20V 3A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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