欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號: 2SB1322AQ
廠商: PANASONIC CORP
元件分類: 小信號晶體管
英文描述: 1000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: ROHS COMPLIANT, MT-2-A1, 3 PIN
文件頁數(shù): 1/4頁
文件大?。?/td> 250K
代理商: 2SB1322AQ
Transistors
1
Publication date: March 2003
SJC00080BED
2SB1322A
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SD1994A
■ Features
Allowing supply with the radial taping
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
60
V
Collector-emitter voltage (Base open)
VCEO
50
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
1A
Peak collector current
ICP
1.5
A
Collector power dissipation *
PC
1W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC
= 10 A, I
E
= 0
60
V
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, IB = 0
50
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 A, IC = 0
5V
Collector-base cutoff current (Emitter open)
ICBO
VCB
= 20 V, I
E
= 0
0.1
A
Forward current transfer ratio
hFE1 *
2
VCE = 10 V, IC = 500 mA
85
340
hFE2
VCE = 5 V, IC = 1 A
50
Collector-emitter saturation voltage *
1
VCE(sat)
IC
= 500 mA, I
B
= 50 mA
0.4
V
Base-emitter saturation voltage *
1
VBE(sat)
IC = 500 mA, IB = 50 mA
1.2
V
Transition frequency
fT
VCB = 10 V, IE = 50 mA, f = 200 MHz
200
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
20
30
pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
No-rank
hFE1
85 to 170
120 to 240
170 to 340
85 to 340
Product of no-rank classification is not marked.
6.9±0.1
2.5±0.1
0.45
1.05±0.05
2.5±0.5
123
2.5±0.5
+0.10
–0.05
0.45
+0.10
–0.05
(0.8)
(0.5)
(1.0)
4.5
±
0.1
14.5
±
0.5
4.0
0.7
0.65 max.
(0.2)
Unit: mm
1: Emitter
2: Collector
3: Base
MT-2-A1 Package
Note) *: Print circuit board: Copper foil area of 1 cm2 or more, and the board
thickness of 1.7 mm for the collector portion
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相關(guān)PDF資料
PDF描述
2SB1326TV2R 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1326TV2/Q 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1329T105 1 A, 32 V, PNP, Si, POWER TRANSISTOR
2SB1329T105R 1 A, 32 V, PNP, Si, POWER TRANSISTOR
2SB1329T105P 1 A, 32 V, PNP, Si, POWER TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SB1322AR 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SB1322AS 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SB1324-TD-E 制造商:SANYO 功能描述:omo 30V 3A 70 to PCP Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR PNP 30V 3A SOT89 制造商:Sanyo 功能描述:0
2SB1325-TD-E 制造商:SANYO 功能描述:omo 20V 4A 70 to PCP Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR PNP 20V 4A SOT89 制造商:Sanyo 功能描述:0
2SB1326TV2Q 功能描述:兩極晶體管 - BJT PNP 20V 5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
主站蜘蛛池模板: 平凉市| 东乡| 安康市| 佛坪县| 竹北市| 深州市| 盐山县| 从江县| 焦作市| 肥东县| 红河县| 武平县| 五家渠市| 巨野县| 长岭县| 灵宝市| 温泉县| 鄂尔多斯市| 安溪县| 将乐县| 丁青县| 米脂县| 宁陕县| 镇康县| 泽库县| 高雄县| 龙里县| 甘洛县| 云梦县| 英德市| 宁化县| 葫芦岛市| 枝江市| 潢川县| 佳木斯市| 柏乡县| 汕头市| 云和县| 遂宁市| 靖江市| 绿春县|