- 您現在的位置：買賣IC網 > PDF目錄371488 > 2SB1393A (PANASONIC CORP) Silicon PNP epitaxial planar type(For power amplification) PDF資料下載
參數資料
| 型號： | 2SB1393A |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon PNP epitaxial planar type(For power amplification) |
| 中文描述： | 3 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220F(A) |
| 封裝： | TO-220, FULL PACK-3 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 46K |
| 代理商： | 2SB1393A |
1
Power Transistors
2SB1393, 2SB1393A
Silicon PNP epitaxial planar type
For power amplification
Complementary to 2SD1985 and 2SD1985A
I
Features
G
Satisfactory linearity of foward current transfer ratio h
FE
G
Low collector to emitter saturation voltage V
CE(sat)
G
Full-pack package which can be installed to the heat sink with
one screw
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–60
–80
–60
–80
–5
–5
–3
25
2.0
150
–55 to +150
Unit
V
V
V
A
A
W
C
C
2SB1393
2SB1393A
2SB1393
2SB1393A
T
C
=25
°
C
Ta=25
°
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CEO
I
CES
I
EBO
V
CEO
h
FE1*
h
FE2
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CE
= –30V, I
B
= 0
V
CE
= –60V, I
B
= 0
V
CE
= –60V, V
BE
= 0
V
CE
= –80V, V
BE
= 0
V
EB
= –5V, I
C
= 0
I
C
= –30mA, I
B
= 0
V
CE
= –4V, I
C
= –1A
V
CE
= –4V, I
C
= –3A
V
CE
= –4V, I
C
= –3A
I
C
= –3A, I
B
= – 0.375A
V
CE
= –5V, I
C
= – 0.1A, f = 1MHz
I
C
= –1A, I
B1
= – 0.1A, I
B2
= 0.1A,
V
CC
= –50V
min
–60
–80
70
10
typ
20
0.5
1.2
0.3
max
–300
–300
–200
–200
–1
250
–1.8
–1.2
Unit
μ
A
μ
A
mA
V
V
V
MHz
μ
s
μ
s
μ
s
2SB1393
2SB1393A
2SB1393
2SB1393A
2SB1393
2SB1393A
*
h
FE1
Rank classification
Rank
Q
P
h
FE1
70 to 150
120 to 250
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
10.0
±
0.2
5.5
±
0.2
7
±
0
1
±
0
0
±
0
1
±
0
S
4
0.5
+0.2
–0.1
1.4
±
0.1
1.3
±
0.2
0.8
±
0.1
2.54
±
0.25
5.08
±
0.5
2
1
3
2.7
±
0.2
4.2
±
0.2
4
±
0
φ
3.1
±
0.1
相關PDF資料 |
PDF描述 |
|---|---|
| 2SB1398 | Silicon PNP epitaxial planer type(For low-frequency output amplification) |
| 2SB1411 | TRANSISTOR (SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS) |
| 2SB1414 | Silicon PNP epitaxial planar type |
| 2SD2134 | Silicon PNP epitaxial planar type |
| 2SB1416 | Silicon PNP epitaxial planar type |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SB1396S-TD-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR PNP 10V 3A SOT89 |
| 2SB1398 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB13980PA | 功能描述:TRANS PNP LF AMP 25VCEO MT-2 RoHS:否 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SB13980QA | 功能描述:TRANS PNP LF AMP 25VCEO MT-2 RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SB1398QTA | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
發布緊急采購，3分鐘左右您將得到回復。