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參數資料
| 型號： | 2SB1420 |
| 廠商： | SANKEN ELECTRIC CO LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon PNP Epitaxial Planar Transistor（Darlington）(硅PNP外延平面晶體管（達林頓）) |
| 中文描述： | 16 A, 120 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | MT-100, TO-3P, 3 PIN |
| 文件頁數： | 1/1頁 |
| 文件大小： | 25K |
| 代理商： | 2SB1420 |
45
I
C
–V
CE
Characteristics
(Typical)
h
FE
–I
C
Characteristics
(Typical)
h
FE
–I
C
Temperature
Characteristics
(Typical)
θ
j-a
–t
Characteristics
I
C
–V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat)–I
B
Characteristics
(Typical)
Pc–Ta Derating
Safe Operating Area
(Single Pulse)
f
T
–I
E
Characteristics
(Typical)
0
–3
–2
–1
–1
–100
–10
Base Current I
B
(mA)
C
C
(
–4A
–8A
I
C
=–16A
–0.3
–1
–16
–10
–5
Collector Current I
C
(A)
D
F
(V
CE
=–4V)
500
10000
5000
1000
20000
Typ
0.2
0.5
3
1
1
10
100
1000
Time t(ms)
T
θ
j
(
–10
–50
–5
–3
–100
–200
–0.03
–0.05
–1
–0.5
–0.1
–10
–50
–5
Collector-Emitter Voltage V
CE
(V)
C
C
(
DC
100
μ
s
10ms
1ms
Without Heatsink
Natural Cooling
80
60
40
20
3.5
00
25
50
75
100
125
150
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
0
0
–10
–20
–26
–2
–1
Collector-Emitter Voltage V
CE
(V)
–6
–5
–4
–3
C
C
(
–40mA
–12mA
–6mA
–3mA
I
B
=–1.5mA
–20mA
0
–16
–8
–12
–4
0
–2.4
–2
–1
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=–4V)
15CCsTm
2CCeep
–0.3
–0.5
–1
–16
–10
–5
500
10000
5000
1000
20000
(V
CE
=–4V)
Collector Current I
C
(A)
D
F
25C
–30C
125C
0.05 0.1
5
10
0.5
1
16
50
0
100
C
T
(
Z
)
(V
CE
=–12V)
Emitter Current I
E
(A)
Typ
Silicon PNP Epitaxial Planar Transistor
Application :
Chopper Regulator, DC Motor Driver and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SB1420
–120
–120
–6
–16(
Pulse
–26)
–1
80(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
2SB1420
–10
max
–10
max
–120
min
2000
min
–1.5
max
–2.5
max
50
typ
350
typ
Unit
μ
A
mA
V
V
V
MHz
pF
Conditions
V
CB
=–120V
V
EB
=–6V
I
C
=–10mA
V
CE
=–4V, I
C
=–8A
I
C
=–8A, I
B
=–16mA
I
C
=–8A, I
B
=–16mA
V
CE
=–12V, I
E
=1A
V
CB
=–10V, f=1MHz
Darlington
2S B1420
(Ta=25°C)
(Ta=25°C)
15.6
±0.4
9.6
1
±
4
2
5
±
1
3.2
±0.1
2
3
1.05
+0.2
-0.1
2
4
B
E
5.45
±0.1
5.45
±0.1
C
4.8
±0.2
0.65
+0.2
-0.1
1.4
2.0
±0.1
a
b
External Dimensions
MT-100(TO3P)
Weight : Approx 6.0g
a. Type No.
b. Lot No.
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–24
2
–12
R
L
(
)
I
C
(A)
V
(V)
5
I
(mA)
24
t
on
(
μ
s)
1.0typ
t
stg
(
μ
s)
3.0typ
t
f
(
μ
s)
1.0typ
I
(mA)
–24
V
(V)
–10
B
C
E
(2k
) (80
)
Equivalent circuit
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