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參數資料
| 型號： | 2SB1432 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 10 A, 100 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | ISOLATED TO-220, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 106K |
| 代理商： | 2SB1432 |
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1998
Document No. D14859EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SB1432
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
DATA SHEET
2002
The 2SB1432 is a Darlington power transistor that can be directly
driven from the output of an IC. This transistor is ideal for OA and FA
equipment such as motor and solenoid drivers.
In
addition,
a
small
resin-molded
insulation
type
package
contributes to high-density mounting and reduction of mounting cost.
FEATURES
High hFE due to Darlington connection
hFE
≥ 1,000 @VCE = 2.0 V, IC = 10 A)
Mold package that does not require an insulation board or insulation
bushing
ABSOLUTE MAXIMUM RATINGS (TA = 25
°°°°C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
VCBO
100
V
Collector to emitter voltage
VCEO
100
V
Emitter to base voltage
VEBO
8.0
V
Collector current (DC)
IC(DC)
–
+10
A
Collector current (pulse)
IC(pulse)
PW
≤ 300
s,
duty cycle
≤ 10%
–
+20
A
Base current (DC)
IB(DC)
1.0
A
TC = 25
°C
30
W
Total power dissipation
PT
TA = 25
°C
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
ORDERING INFORMATION
Part No.
Package
2SB1432
Isolated TO-220
(Isolated TO-220)
INTERNAL EQUIVALENT CIRCUIT
1. Base
2. Collector
3. Emitter
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SB1432-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:PNP PWR Transistor,100V,10A,isoTO-220 制造商:Renesas 功能描述:Trans Darlington PNP 100V 10A 3-Pin(3+Tab) TO-220 Isolated |
| 2SB1432-AZ(L) | 制造商:Renesas Electronics 功能描述:PNP |
| 2SB1432-AZ-K | 制造商:Renesas Electronics 功能描述:PNP 制造商:Renesas Electronics 功能描述:PNP Bulk |
| 2SB143400A | 功能描述:TRANS PNP LF AMP 50VCEO MT-2 RoHS:否 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SB14350RA | 功能描述:TRANS PNP 50VCEO 2A MT-3 RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
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