- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄33340 > 2SB1462S (PANASONIC CORP) 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | 2SB1462S |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SSMINI3-G1, SC-75, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 216K |
| 代理商： | 2SB1462S |
Transistors
1
Publication date: November 2002
SJC000272BED
2SB1462
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SD2216
■ Features
High forward current transfer ratio h
FE
SS-Mini type package allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
60
V
Collector-emitter voltage (Base open)
VCEO
50
V
Emitter-base voltage (Collector open)
VEBO
7V
Collector current
IC
100
mA
Peak collector current
ICP
200
mA
Collector power dissipation
PC
125
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
55 to +125
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC
= 10 A, I
E
= 0
60
V
Collector-emitter voltage (Base open)
VCEO
IC = 100 A, IB = 0
50
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 A, IC = 0
7V
Collector-base cutoff current (Emitter open)
ICBO
VCB
= 20 V, I
E
= 0
0.1
A
Collector-emitter cutoff current (Base open)
ICEO
VCE = 10 V, IB = 0
100
A
Forward current transfer ratio *
hFE
VCE = 10 V, IC = 2 mA
160
460
Collector-emitter saturation voltage
VCE(sat)
IC
= 100 mA, I
B
= 10 mA
0.3
0.5
V
Transition frequency
fT
VCB = 10 V, IE = 1 mA, f = 200 MHz
80
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
2.7
pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
1.6
±
0.15
1.6±0.1
5
1
1.0±0.1
0.75
±
0.15
0.45
±
0.1
0
to
0.1
(0.5)
(0.3)
(0.5)
0.8
±
0.1
(0.4)
0.15
+0.1
–0.05
0.2
+0.1
–0.05
1
2
3
0.2
±
0.1
1 : Base
2 : Emitter
3 : Collector
EIAJ : SC-75
SSMini3-G1 Package
Marking Symbol: A
Rank
Q
R
S
No Rank
hFE
160 to 260
210 to 340
290 to 460
160 to 460
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB1463T | 50 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1465 | 0.3 A, 300 V, PNP, Si, POWER TRANSISTOR |
| 2SB1477F31 | 5 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-247 |
| 2SD2236 | 5 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-247 |
| 2SA1789 | 12 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-247 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1463GRL | 功能描述:TRANS PNP 150VCEO 50MA SSMINI-3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SB1463JRL | 功能描述:TRANS PNP 150VCEO 50MA SSMINI-3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SB1472-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANS DARL PNP 60V 7A TO-220MF |
| 2SB1474TL | 功能描述:達林頓晶體管 DARL PNP 80V 4A RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2SB1481(Q) | 制造商:Toshiba 功能描述:PNP -100V -4A 2000 TO220NIS 制造商:Toshiba 功能描述:PNP -100V -4A 2000 TO220NIS Bulk 制造商:Toshiba America Electronic Components 功能描述:Semi, Bipolar, Transistor, PNP, Power, D |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。