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參數資料
| 型號： | 2SB1605 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon PNP epitaxial planar type(For low-freauency power amplification) |
| 中文描述： | 3 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220E |
| 封裝： | TO-220E, FULL PACK-3 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 164K |
| 代理商： | 2SB1605 |
1
Power Transistors
2SB1605, 2SB1605A
Silicon PNP epitaxial planar type
For low-freauency power amplification
s Features
q
High forward current transfer ratio hFE which has satisfactory linearity
q
Low collector to emitter saturation voltage VCE(sat)
q
Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
s Absolute Maximum Ratings (T
C=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–60
–80
–60
–80
–5
–3
35
2
150
–55 to +150
2SB1605
2SB1605A
2SB1605
2SB1605A
TC=25°C
Ta=25
°C
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220E Full Pack Package
9.9
±0.3
23
1
4.6
±0.2
2.9
±0.2
2.6
±0.1
2.54
±0.2
0.75
±0.1
1.2
±0.15
5.08
±0.4
15.0
±0.3
13.7
+0.5
–0.2
φ3.2±0.1
3.0
±0.2
8.0
±0.2
4.1
±0.2
Solder
Dip
1.45
±0.15
0.7
±0.1
7
°
Unit
V
A
W
C
s Electrical Characteristics (T
C=25C)
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
ICES
ICEO
IEBO
VCEO
hFE1
*
hFE2
VBE
VCE(sat)
fT
ton
tstg
tf
Conditions
VCE = –60V, VBE = 0
VCE = –80V, VBE = 0
VCE = –30V, IB = 0
VCE = –60V, IB = 0
VEB = –5V, IC = 0
IC = –30mA, IB = 0
VCE = –4V, IC = –1A
VCE = –4V, IC = –3A
IC = –3A, IB = – 0.375A
VCE = –10V, IC = – 0.5A, f = 10MHz
IC = –1A, IB1 = – 0.1A, IB2 = 0.1A
min
–60
–80
70
10
typ
30
0.5
1.2
0.3
max
–200
–300
–1
250
–1.8
–1.2
Unit
A
mA
V
MHz
s
2SB1605
2SB1605A
2SB1605
2SB1605A
2SB1605
2SB1605A
*h
FE1 Rank classification
Rank
Q
P
hFE1
70 to 150
120 to 250
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Please
visit
following
URL
about
latest
information.
http://panasonic.co.jp/semicon/e-index.html
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