欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: 2SB601K
廠商: NEC Corp.
英文描述: TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 5A I(C) | TO-220AB
中文描述: 晶體管|晶體管|達林頓|進步黨| 100V的五(巴西)總裁| 5A條一(c)| TO - 220AB現有
文件頁數: 1/6頁
文件大小: 110K
代理商: 2SB601K
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
Document No. D16131EJ3V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SB601
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
DATA SHEET
FEATURES
High-DC current gain due to Darlington connection
Low collector saturation voltage
Low collector cutoff current
Ideal for use in direct drive from IC output for magnet drivers such
as treminal equipment or cash registers
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
100
V
Collector to emitter voltage
V
CEO
100
V
Emitter to base voltage
V
EBO
7.0
–5.0
V
Collector current
I
C(DC)
A
Collector current
I
C(pulse)
*
–8.0
A
Base current
I
B(DC)
0.5
A
Total power dissipation
P
T
(Ta = 25
°
C)
1.5
W
Total power dissipation
P
T
(Tc = 25
°
C)
30
W
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55 to +150
°
C
* PW
10 ms, duty cycle
50%
PACKAGE DRAWING (UNIT: mm)
相關PDF資料
PDF描述
2SB601L TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 5A I(C) | TO-220AB
2SB601M TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 5A I(C) | TO-220AB
2SB601 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
2SB605 PNP SILICON TRANSISTOR
2SB605K TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 700MA I(C) | SPAKVAR
相關代理商/技術參數
參數描述
2SB601-K(AZ) 制造商:Renesas Electronics Corporation 功能描述:
2SB601L 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 5A I(C) | TO-220AB
2SB601-L(AZ) 制造商:Renesas Electronics Corporation 功能描述:
2SB601M 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 5A I(C) | TO-220AB
2SB605 制造商:NEC 制造商全稱:NEC 功能描述:PNP SILICON TRANSISTOR
主站蜘蛛池模板: 武安市| 广南县| 泰宁县| 元谋县| 蓬溪县| 新丰县| 阳谷县| 信阳市| 南涧| 宜宾县| 万载县| 祁连县| 乐陵市| 桃园县| 都昌县| 宁蒗| 大田县| 黎平县| 任丘市| 信阳市| 新津县| 易门县| 勐海县| 丹巴县| 尼玛县| 大名县| 武山县| 乌拉特中旗| 黎川县| 新丰县| 晋江市| 股票| 桐梓县| 内江市| 信丰县| 二手房| 长寿区| 章丘市| 咸阳市| 扬中市| 措美县|