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參數(shù)資料
型號: 2SB624ABV3
元件分類: 小信號晶體管
英文描述: 700 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: MINIMOLD PACKAGE-3
文件頁數(shù): 1/4頁
文件大小: 245K
代理商: 2SB624ABV3
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confirm that this is the latest version.
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SILICON TRANSISTOR
2SB624A
AUDIO FREQUENCY POWER AMPLIFIER
PNP SILICON EPITAXIAL TRANSISTOR
MINI MOLD
DATA SHEET
Document No. D18029EJ1V0DS00 (1st edition)
Date Published April 2006 NS CP(K)
Printed in Japan
c
2006
PACKAGE DRAWING
(Unit: mm)
FEATURES
Complementary to NEC 2SD596A NPN Transistor.
High DC Current Gain: hFE = 200 TYP. (VCE = 1.0 V, IC = 100 mA)
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Collector to Base Voltage
VCBO
30
V
Collector to Emitter Voltage
VCEO
25
V
Emitter to Base Voltage
VEBO
5.0
V
Collector Current (DC)
IC
700
mA
Total Power Dissipation
PT
200
mW
Junction Temperature
Tj
150
°C
Storage Temperature Range
Tstg
55 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cut-off Current
ICBO
100
nA
VCB =
30 V, IE = 0 A
Emitter Cut-off Current
IEBO
100
nA
VEB =
5.0 V, IC = 0 A
hFE1
110
200
400
VCE =
1.0 V, IC = 100 mA Note
DC Current Gain
hFE2
50
VCE =
1.0 V, IC = 700 mA Note
Collector Saturation Voltage
VCE(sat)
0.25
0.6
V
IC =
700 mA, IB = 70 mA Note
Base to Emitter Voltage
VBE
600
640
700
mV
VCE =
6.0 V, IC = 10 mA Note
Gain Bandwidth Product
fT
160
MHz
VCE =
6.0 V, IE = 10 mA
Output Capacitance
Cob
17
pF
VCB =
6.0 V, IE = 0 A, f = 1.0 MHz
Note Pulsed: PW
≤ 350
μs, Duty Cycle ≤ 2%
hFE1 CLASSIFICATION
Marking
BV1
BV2
BV3
BV4
BV5
hFE1
110 to 180
135 to 220
170 to 270
200 to 320
250 to 400
1. Emitter
2. Base
3. Collector
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2SB624ABV5 700 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB624ABV2 700 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
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2SB624A 700 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SB624BV1 制造商:NEC 制造商全稱:NEC 功能描述:BJT
2SB624BV2 制造商:NEC 制造商全稱:NEC 功能描述:BJT
2SB624BV3 制造商:NEC 制造商全稱:NEC 功能描述:BJT
2SB624BV4 制造商:NEC 制造商全稱:NEC 功能描述:BJT
2SB624BV5 制造商:NEC 制造商全稱:NEC 功能描述:BJT
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