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參數資料
| 型號： | 2SB926-R |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | NP, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 35K |
| 代理商： | 2SB926-R |
2SB926 / 2SD1246
No.1030-1/4
Applications
Power supplies, relay drivers, lamp drivers, electrical equipment.
Features
Adoption of FBET, MBIT processes.
Low saturation voltage.
Large current capacity and wide ASO.
Specifications ( ) : 2SB926
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--)30
V
Collector-to-Emitter Voltage
VCEO
(--)25
V
Emitter-to-Base Voltage
VEBO
(--)6
V
Collector Current
IC
(--)2
A
Collector Current (Pulse)
ICP
(--)5
A
Collector Dissipation
PC
0.75
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)20V, IE=0A
(--)0.1
A
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0A
(--)0.1
A
DC Current Gain
hFE1VCE=(--)2V, IC=(--)100mA
100*
560*
hFE2VCE=(--)2V, IC=(--)1.5A, pulse
65
130
Gain-Bandwidth Product
fT
VCE=(--)10V, IC=(--)50mA
150
MHz
Output Capacitance
Cob
VCB=(--)10V, f=1MHz
(32)19
pF
Continued on next page.
* : The 2SB926 / 2SD1246 are classified by 100mA hFE as follows :
Rank
R
S
T
U
hFE
100 to 200
140 to 280
200 to 400
280 to 560
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN1030F
O1806EA SY IM TC-00000244 / O0303TN (KT) / 92098HA (KT) / 4077KI / 2275MW / D282KI, TS
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
SANYO Semiconductors
DATA SHEET
2SB926 / 2SD1246
PNP / NPN Epitaxial Planar Silicon Transistors
Large-Current Driving Applications
相關PDF資料 |
PDF描述 |
|---|---|
| 2SC3382-R | 200 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1246-T | 2000 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC945-O-AP | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SB772 | 3000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 2SB772E | 3000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SB926S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 2A I(C) | TO-92 |
| 2SB926T | 制造商:Sony Semiconductor Solutions Division 功能描述: |
| 2SB926T-AA | 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR PNP 25V 2A TO-92 |
| 2SB926U | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 2A I(C) | TO-92 |
| 2SB927 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Large-Current Driving Applications |
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