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參數資料
| 型號： | 2SB928 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon PNP epitaxial planar type(For power amplification) |
| 中文描述： | 2 A, 150 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, N-G1, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 49K |
| 代理商： | 2SB928 |
1
Power Transistors
2SB928, 2SB928A
Silicon PNP epitaxial planar type
For power amplification
For TV vartical deflection output
Complementary to 2SD1250 and 2SD1250A
I
Features
G
High collector to emitter V
CEO
G
High collector power dissipation P
C
G
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–200
–150
–180
–6
–3
–2
30
1.3
150
–55 to +150
Unit
V
V
V
A
A
W
C
C
2SB928
2SB928A
T
C
=25
°
C
Ta=25
°
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
V
EBO
h
FE1*
h
FE2
V
BE
V
CE(sat)
f
T
Conditions
V
CB
= –200V, I
E
= 0
V
EB
= –4V, I
C
= 0
I
C
= –500
μ
A, I
E
= 0
I
C
= –5mA, I
B
= 0
I
E
= –500
μ
A, I
C
= 0
V
CE
= –10V, I
C
= –150mA
V
CE
= –10V, I
C
= –400mA
V
CE
= –10V, I
C
= –400mA
I
C
= –500mA, I
B
= –50mA
V
CE
= –10V, I
C
= – 0.5A, f = 10MHz
min
–200
–150
–180
–6
60
50
typ
30
max
–50
–50
240
–1
–1
Unit
μ
A
μ
A
V
V
V
V
V
MHz
2SB928
2SB928A
*
h
FE1
Rank classification
Rank
Q
P
h
FE1
60 to 140
100 to 240
Note: Ordering can be made by the common rank (PQ rank h
FE1
= 60 to 240) in the rank classification.
Unit: mm
1:Base
2:Collector
3:Emitter
N Type Package
8.5
±
0.2
6.0
±
0.5
1
±
0
1
2
1
±
0
1.5max.
0.8
±
0.1
5.08
±
0.5
2.54
±
0.3
1.1max.
0.5max.
1.0
±
0.1
3.4
±
0.3
2
1
3
Unit: mm
3.4
±
0.3
8.5
±
0.2
4
±
0
2
1
±
0
1
±
0
4
±
0
6.0
±
0.3
2.54
±
0.3
5.08
±
0.5
1.0
±
0.1
0.8
±
0.1
1
+
–
3
+
–
0 to 0.4
1.1 max.
R0.5
R0.5
1
2
3
1:Base
2:Collector
3:Emitter
N Type Package (DS)
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| 2SB929A | Silicon PNP epitaxial planar type(For power amplification) |
| 2SD1252A | Silicon PNP epitaxial planar type(For power amplification) |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SB928A | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type(For power amplification) |
| 2SB928AP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 180V V(BR)CEO | 2A I(C) | TO-262VAR |
| 2SB928APQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 180V V(BR)CEO | 2A I(C) | TO-262VAR |
| 2SB928AQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 180V V(BR)CEO | 2A I(C) | TO-262VAR |
| 2SB928P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 2A I(C) | TO-262VAR |
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