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參數(shù)資料
| 型號： | 2SB946 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon PNP epitaxial planar type(For power switching) |
| 中文描述： | 7 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | ROHS COMPLIANT, SC-67, TO-220F-A1, FULL PACK-3 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 55K |
| 代理商： | 2SB946 |
1
Power Transistors
2SB946
Silicon PNP epitaxial planar type
For power switching
Complementary to 2SD1271
I
Features
G
Low collector to emitter saturation voltage V
CE(sat)
G
Satisfactory linearity of foward current transfer ratio h
FE
G
Large collector current I
C
G
0Full-pack package which can be installed to the heat sink with
one screw
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–130
–80
–7
–15
–7
40
2
150
–55 to +150
Unit
V
V
V
A
A
W
C
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2*
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= –100V, I
E
= 0
V
EB
= –5V, I
C
= 0
I
C
= –10mA, I
B
= 0
V
CE
= –2V, I
C
= – 0.1A
V
CE
= –2V, I
C
= –3A
I
C
= –5A, I
B
= – 0.25A
I
C
= –5A, I
B
= – 0.25A
V
CE
= –10V, I
C
= – 0.5A, f = 10MHz
I
C
= –3A, I
B1
= – 0.3A, I
B2
= 0.3A
min
–80
45
90
typ
30
0.5
1.5
0.1
max
–10
–50
260
– 0.5
–1.5
Unit
μ
A
μ
A
V
V
V
MHz
μ
s
μ
s
μ
s
*
h
FE2
Rank classification
T
C
=25
°
C
Ta=25
°
C
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
10.0
±
0.2
5.5
±
0.2
7
±
0
1
±
0
0
±
0
1
±
0
S
4
0.5
+0.2
–0.1
1.4
±
0.1
1.3
±
0.2
0.8
±
0.1
2.54
±
0.25
5.08
±
0.5
2
1
3
2.7
±
0.2
4.2
±
0.2
4
±
0
φ
3.1
±
0.1
Note: Ordering can be made by the common rank (PQ rank h
FE2
= 90 to 260) in the rank classification.
Rank
Q
P
h
FE2
90 to 180
130 to 260
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PDF描述 |
|---|---|
| 2SB947 | Silicon PNP epitaxial planar type(For low-voltage switching) |
| 2SB947A | Silicon PNP epitaxial planar type(For low-voltage switching) |
| 2SB948 | Silicon PNP epitaxial planar type |
| 2SB948A | Silicon PNP epitaxial planar type |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB946A | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistor |
| 2SB946P | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB946PQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 7A I(C) | SC-67 |
| 2SB946Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 7A I(C) | SC-67 |
| 2SB946QLB | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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