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參數資料
| 型號： | 2SC1518 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon NPN epitaxial planer type(For high-frequency bias oscillation of tape recorders) |
| 中文描述： | 1000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | ROHS COMPLIANT, SC-51, TO-92L-A1, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 47K |
| 代理商： | 2SC1518 |
1
Transistor
2SC1518
Silicon NPN epitaxial planer type
For high-frequency bias oscillation of tape recorders
For DC-DC converter
I
Features
G
Low collector to emitter saturation voltage V
CE(sat)
.
G
Satisfactory operation performances and high efficiency with a
low-voltage power supply.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
5.9
±
0.2
2.54
±
0.15
0.7
±
0.1
4.9
±
0.2
8
±
0
0
+
–
1
±
0
3
0.45
+0.2
1.27
1.27
0.45
+0.2
1
3
2
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
25
20
5
1.5
1
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter saturation voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
BE(sat)
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 25V, I
E
= 0
V
CE
= 20V, I
B
= 0
I
C
= 10
μ
A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 2V, I
C
= 500mA
*2
V
CE
= 2V, I
C
= 1A
*2
I
C
= 500mA, I
B
= 50mA
*2
I
C
= 1A, I
B
= 50mA
*2
V
CB
= 10V, I
E
= –50mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
25
20
5
90
50
typ
100
150
12
max
100
1
330
1.2
0.5
20
Unit
nA
μ
A
V
V
V
V
V
MHz
pF
*1
h
FE1
Rank classification
Rank
Q
R
S
h
FE1
90 ~ 155
130 ~ 220
185 ~ 330
*2
Pulse measurement
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相關代理商/技術參數 |
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| 2SC15180R | 功能描述:TRANS NPN 20VCEO 1A TO-92L RoHS:否 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SC1518Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | TO-92VAR |
| 2SC1518R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | TO-92VAR |
| 2SC1518S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | TO-92VAR |
| 2SC1520 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN Triple Diffued Silicon Transistor |
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