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參數資料
| 型號： | 2SC1568 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | FILTER PLATE Bushing #8 |
| 中文描述： | 1 A, 18 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 封裝： | ROHS COMPLIANT, TO-126B-A1, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 94K |
| 代理商： | 2SC1568 |
Power Transistors
2SC1568
Silicon NPN epitaxial planar type
1
Publication date: January 2003
SJD00093BED
For low-voltage type medium output power amplification
Complementary to 2SA0900
■
Features
Low collector-emitter saturation voltage V
CE(sat)
Satisfactory operation performances and high efficiency with a low-
voltage power supply
TO-126B package which incorporates a unique construction en-
abling installation to the heat sink without using insulation parts
■
Absolute Maximum Ratings
T
a
=
25
°
C
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Unit: mm
3.2
±
0.2
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
V
CEO
I
C
=
10
μ
A, I
E
=
0
I
C
=
1 mA, I
B
=
0
I
E
=
10
μ
A, I
C
=
0
V
CB
=
10 V, I
E
=
0
V
CE
=
18 V, I
B
=
0
V
CE
=
2 V, I
C
=
500 mA
V
CE
=
2 V, I
C
=
1.5 A
I
C
=
1 A, I
B
=
50 mA
I
C
=
500 mA, I
B
=
50 mA
V
CB
=
6 V, I
E
=
50 mA, f
=
200 MHz
V
CB
=
6 V, I
E
=
0, f
=
1 MHz
18
V
Collector-emitter voltage (Base open)
18
V
Emitter-base voltage (Collector open)
V
EBO
5
V
Collector-base cutoff current (Emitter open)
I
CBO
I
CEO
h
FE1 *
1
μ
A
μ
A
Collector-emitter cutoff current (Base open)
10
Forward current transfer ratio
90
280
h
FE2
V
CE(sat)
50
100
Collector-emitter saturation voltage
0.5
V
Base-emitter saturation voltage
V
BE(sat)
1.2
V
Transition frequency
f
T
C
ob
150
MHz
Collector output capacitance
(Common base, input open circuited)
12
pF
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
8.0
+0.5
1
±
0
3
±
0
3
±
0
1
±
0
1
±
1
0.75
±
0.1
0.5
±
0.1
2.3
±
0.2
4.6
±
0.2
0.5
±
0.1
1.76
±
0.1
1
2
3
φ
3.16
±
0.1
Rank
Q
R
S
h
FE1
90 to 155
130 to 210
180 to 280
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
18
V
Collector-emitter voltage (Base open)
V
CEO
V
EBO
18
V
Emitter-base voltage (Collector open)
5
V
Collector current
I
C
1
A
Peak collector current
I
CP
P
C
2
A
Collector power dissipation
1.2
W
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
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|---|---|
| 2SC1569 | General Purpose Filters RoHS Compliant: Yes |
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| 2SC1573A | Silicon NPN triple diffusion planer type(For high breakdown voltage general amplification) |
| 2SC1573B | Silicon NPN triple diffusion planer type(For high breakdown voltage general amplification) |
| 2SC1583 | 2SC1583 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC15680R | 功能描述:TRANS NPN HF 18VCEO 1A TO-126 RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SC1568Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 1A I(C) | TO-126 |
| 2SC1568R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 1A I(C) | TO-126 |
| 2SC1568S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 1A I(C) | TO-126 |
| 2SC1568T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 1A I(C) | TO-126 |
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