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參數資料
| 型號： | 2SC1927 |
| 廠商： | NEC Corp. |
| 元件分類： | 運動控制電子 |
| 英文描述： | NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE |
| 中文描述： | NPN硅外延雙晶體管差分放大器和超高速開關工業用 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 36K |
| 代理商： | 2SC1927 |
1996
DATA SHEET
SILICON TRANSISTOR
2SC1927
DESCRIPTION
The 2SC1927 is an NPN silicon epitaxial dual transistor that
consists of two chips equivalent to the 2SC1275, and is designed for
differential amplifier and ultra-high-speed switching applications.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
V
CBO
30
V
Collector to Emitter Voltage
V
CEO
14
V
Emitter to Base Voltage
V
EBO
3.0
V
Collector Current
I
C
50
mA
Collector Dissipation
P
C
200
mW/unit
Total Power Dissipation
P
T
300
mW
Junction Temperature
T
j
200
C
Storage Temperature
T
stg
–65 to +200
C
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CES
V
CE
= 15 V, R
BE
= 0
50
nA
Emitter Cut-off Current
I
EBO
V
EB
= 2.0 V, I
C
= 0
50
nA
DC Current Gain
h
FE
V
CE
= 10 V, I
C
= 10 mA
25
80
200
h
FE
Ratio
h
FE1
/h
FE2
V
CE
= 10 V, I
C
= 10 mA
*
1
0.8
1.0
Difference of Base to Emitter Voltage
V
BE
V
CE
= 10 V, I
C
= 10 mA
30
mV
Gain Bandwidth Product
f
T
V
CE
= 10 V, I
C
= 10 mA
*
2
1.5
2.0
GHz
Output Capacitance
C
ob
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
*
3
1.1
1.5
pF
* 1.
h
FE1
is the smaller h
FE
value of the 2 transistors.
2.
Sampling check shall be done on a production lot base using a TO-18 packaged device (equivalent to the
2SC1275).
3.
Measured with a 3-terminal bridge, terminals other than the collector and base of the device under test should
be connected to the guard terminal of the bridge.
Document No. P11671EJ1V0DS00 (1st edition)
Date Published July 1996 P
Printed in Japan
NPN SILICON EPITAXIAL DUAL TRANSISTOR
FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING
INDUSTRIAL USE
PACKAGE DIMENSIONS
(in millimeters)
5.0 MIN.
3.5
+0.3
5.0 MIN.
3
2
1
0
±
0
4
5
6
2
0
+
–
1
±
0
1
±
0
3
2C
4
1C
6
1B
1
2B
5
1E
2
2E
PIN CONNECTIONS
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| 2SC19530S | 功能描述:TRANS NPN HF 150VCEO 50MA TO-126 RoHS:否 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
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